STB9NK80Z Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STB9NK80Z is a part of an active component silicon family that falls into Stmicroelectronics’ SuperMESH technology. It is a single N channel 800V rated device that comes in at TO-220, DPAK and D2PAK packaging. Having the ability to support avalanche rated diodes, this device is the ideal choice to create efficient power supplies, motor control and overvoltage protectors. In this article, we will take a look at the application field and working principle of the STB9NK80Z.

Application Field

The STB9NK80Z can be used in various applications such as power supplies, motor control, and overvoltage protectors. It is also suitable for buck regulators where a low on resistance is a must and low voltage drop is needed. With the help of its safe operating area maximum junction temperature and avalanche current rating, it can be used in high power applications.

In motor control applications, the STB9NK80Z can be used in bridge configuration to reduce the number of power stages. As the device has a maximum drain-source voltage of 800V, it also enables the connection of high voltage sources providing a better control of the motor. Its avalanche rated diodes provide superior ruggedness for operation in harsh environments making it ideal for industrial motor control applications.

In power supplies, the STB9NK80Z is the ideal choice for flyback, LLC, and boost circuits. It can support a wide range of voltage and power levels and it can be used for both primary and secondary side control. It also provides a low on-resistance (Rds(on)) which helps in reducing power losses. The low self-capacitance on the device provides a high frequency response making it well suited for fast transient responses.

Working Principle

The STB9NK80Z is a metal oxide semiconductor field effect transistor (MOSFET). It relies on metal oxide gates which are oxide-insulated gate electrode layers placed between a metal gate and the substrate. This oxide layer provides an electric field to affect the conductivity between the source and the drain.

The STB9NK80Z also uses SuperMESH technology developed by Stmicroelectronics in order to optimize the current flow. This technology uses a special design of its cell structure which helps to reduce the power losses. By allowing a better control of the charge carriers’ movement over the channel, it helps to reduce the effect of other electric fields on the device thus improving its overall performance.

The N-channel MOSFETs employed in the STB9NK80Z has three terminals: the gate (G), the source (S) and the drain (D). The semiconductor used in the device is a thicker than in traditional MOSFET devices in order to provide higher current handling capability. The device also features an integrated fast recovery diode that reduces the time needed for a change in the device\'s operation from on to off.

When in operation, the STB9NK80Z can be seen as a controllable switch that is open when there is no voltage applied to the gate and closed when voltage is applied. When the gate gets to a particular voltage, the charge carriers start to populate the channel and create a current between the source and drain. The higher the gate voltage applied, the more current that can pass through the device.

The STB9NK80Z is an ideal choice for a wide range of power switching and protection applications where a low on resistance and low voltage drop is needed. It is a robust single N channel device that is suitable for high power applications. Furthermore, it features integrated avalanche rated diodes making it an excellent choice for use in industrial motor control applications. Its use of SuperMESH technology makes it capable of a wide range of voltage and power levels.

The specific data is subject to PDF, and the above content is for reference