STE250NS10

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The STE250NS10 is a silicon N-Channel power MOSFET developed and manufactured by STMicroelectronics. This power MOSFET is a voltage controlled device which can be used as a switch, meaning it can be used to turn a load either on or off by applying a current to its gate and source terminals. This device is designed for applications where high forward blocking voltage, low on resistance and high efficiency are required. The STE250NS10 is a high-performance device which operates in the popular TO-220AB package. It features a drain-to-source breakdown voltage of 200V, a drain-to-source saturation voltage of 0.78V, a maximum drain current of 25A at 100 degrees Celsius, and a maximum drain-source voltage of 25V. It is optimized for maximum power dissipation of 50W and has a total gate charge of 13.8nC. It also has a low gate turn-on threshold, making it suitable for applications requiring high switching speeds.

The STE250NS10 is an excellent choice for a variety of applications such as DC-DC converters, high-current switching applications, and low-side switch power supplies. It is also commonly used in switching voltage regulators and lamp dimmers.

The working principle of the STE250NS10 is based on the “channel effect”. This is a property of semiconductors which has to do with the behavior of charge carriers in an electric field. In the case of the STE250NS10, the N-type channel is used to control the flow of current between the drain and the source terminals.

When the voltage at the gate is higher than the voltage at the source, the drain-to-source resistance is lowered. As a result, current will flow more freely through the MOSFET and the device is said to be “on”. When the voltage at the gate is lower than the voltage at the source, the drain-to-source resistance is increased. Current will flow more slowly and the device is said to be “off”. This is how the STE250NS10 is used to control the flow of current between two points.

The STE250NS10 is an important component in many power switching applications because of its high operating voltage, low on-resistance and fast turn-on time. This power MOSFET is capable of handling large amounts of current and can be used for a variety of applications. It is also an ideal choice for applications where low voltage drop and high efficiency are required.

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