STE26NA90

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The STE26NA90 is a n-channel enhancement mode insulated gate field effect transistor (IGFET). It is the first silicon-based high voltage, high-density insulation solid-state switch suitable for applications with a need for more than a thousand volts. This transistor is capable of regulating the motion of gate signals and ensuring low on-resistance across the transistor gate.

The device basically comprises of a high voltage P-N-N structure with N-channel insulation gate FET arranged in the P-N substrate layer. This device comes with integrated source and drain resistors to provide extra protection. This circuit utilises trench gate technology to deliver low on-resistance and improved switching efficiency.

This device is used in a variety of applications such as motor control, power converters, lighting control and medical power. It is also suitable for high voltage relay applications. One of the main advantages of this device is that it can effectively control the voltage in power circuits with a high voltage range, saving power in the process. Another advantage of this device is that it is able to handle up to 2800V of peak power.

The working principle of the STE26NA90 is fairly simple. The gate of the transistor acts as a switch, which is connected to a power source. When the gate is activated by the voltage from the power source, the connection between the drain and source is closed, allowing current to flow from the drain to the source. The on-resistance across the transistor is kept low by the integrated source and drain resistors, while the trench gate technology ensures that the switching efficiency is improved.

The STE26NA90 is a versatile device which is suitable for a wide range of applications. Its high voltage rating and low on-resistance are among its main advantages, making it an excellent choice for motor control, power converters, lighting control and medical power applications. This transistor is also able to handle up to 2800V of peak power, providing reliable operation without any problems.

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