STF9N80K5

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The STF9N80K5 is a type of Field Effect Transistor (FET) developed by STMicroelectronics in 2004. It belongs to the single MOSFET family, a type of FET that uses a single Gate to control current between the drain and the source. The STF9N80K5 is an N-Channel FET and is made with a vertical power MOS process. It is typically used in applications that require efficient switching of power in high frequency circuits.

Field-effect transistors are transistors that use an electric field to control current conduction. They have three terminals - the gate, the source, and the drain - and are commonly used for signal processing and for controlling the flow of electricity in power circuits. The gate and the source form the input signal and the drain controls the output. Between the gate and the source is the gate oxide, an insulating layer that ensures that the voltage signal produced by the gate is amplified as it travels to the drain. The STF9N80K5 is made with a vertical power MOS process, which uses a vertical structure to optimize device characteristics, resulting in high operating voltages, low on-resistance, and improved performance.

The STF9N80K5 is a high-frequency FET, meaning that it has the capability to switch high-frequency signals. It is designed specifically for power switching applications, such as mobile and automotive systems, LED lighting, LED lighting controllers, air-conditioning and power tools. It has been designed with very low on-resistance and a low gate charge to minimize switching and conduction losses. It also features a fast switching speed and a low gate threshold voltage, and can operate at a frequency of up to 120 kHz. It is protected against short-circuit and reverse-battery stress and is rated for up to 800 V.

The STF9N80K5\'s working principle relies on the gate voltage controlling the voltage drop across the semiconductor channel. By having a certain voltage applied to the gate, a charge is induced in the gate-source junction, thus creating a conductive channel between the source and the drain. As the gate voltage increases, more charge is induced and the channel resistance decreases, allowing more current to flow through the FET. When the gate voltage is reversed, the charge is reduced and the FET is now in the off state, blocking the current.

The STF9N80K5 is a versatile and robust device suitable for applications ranging from mobile and automotive systems to LED lighting and air-conditioning systems. It offers a low on-resistance rating and fast switching speeds and is protected against short-circuits and reverse-battery stress. It relies on the gate voltage controlling the voltage drop across the channel for efficient and reliable power switching.

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