
Allicdata Part #: | 497-7476-5-ND |
Manufacturer Part#: |
STF9NM50N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 7.5A TO-220FP |
More Detail: | N-Channel 500V 5A (Tc) 25W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 50V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | MDmesh™ |
Rds On (Max) @ Id, Vgs: | 560 mOhm @ 3.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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The STF9NM50N is a type of N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is commonly used in power electronics, with applications ranging from switching circuits and converters to class-D power amplifiers. It is a popular component due to its excellent thermal characteristics and low on-resistance values. This article will explore the applications and working principle of the STF9NM50N.The STF9NM50N is primarily used in power electronics circuits, due to its high current carrying capabilities and excellent low gate-source threshold voltage (VGS(th)). The low VGS(th) allows for good switching performance and minimizes the losses associated with switching transistors. The device also offers high voltage and current capability, with a maximum drain current (Id) of 75A and a maximum drain-source voltage (Vds) of 550V. In addition, the transistor has a low on-resistance, meaning that it produces less heat when operated at higher currents. The excellent thermal performance of the STF9NM50N makes it suitable for use in high-power, high-temperature applications.The working principle of the STF9NM50N is similar to other MOSFET transistors. It consists of an n-channel, meaning that current flow between the source and drain is controlled by the gate voltage. When a positive voltage is applied to the gate, electrons are attracted to the positive-charge region around the gate, creating a thin layer of electron-rich semiconductor material between the source and drain. This layer, known as the inversion layer, allows current to flow between the source and drain, thus turning the MOSFET "on". When the gate voltage is reversed, the inversion layer disappears and the current flow is cut off, turning the MOSFET "off".In conclusion, the STF9NM50N is an ideal choice for a wide range of power electronics applications. It offers excellent characteristics such as low on-resistance values and high current carrying capabilities, as well as a low threshold voltage for good switching performance. Finally, understanding the working principle of the STF9NM50N will help in optimizing its performance for specific applications.
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