STF9NM50N Allicdata Electronics
Allicdata Part #:

497-7476-5-ND

Manufacturer Part#:

STF9NM50N

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 500V 7.5A TO-220FP
More Detail: N-Channel 500V 5A (Tc) 25W (Tc) Through Hole TO-22...
DataSheet: STF9NM50N datasheetSTF9NM50N Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: MDmesh™
Rds On (Max) @ Id, Vgs: 560 mOhm @ 3.7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STF9NM50N is a type of N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is commonly used in power electronics, with applications ranging from switching circuits and converters to class-D power amplifiers. It is a popular component due to its excellent thermal characteristics and low on-resistance values. This article will explore the applications and working principle of the STF9NM50N.The STF9NM50N is primarily used in power electronics circuits, due to its high current carrying capabilities and excellent low gate-source threshold voltage (VGS(th)). The low VGS(th) allows for good switching performance and minimizes the losses associated with switching transistors. The device also offers high voltage and current capability, with a maximum drain current (Id) of 75A and a maximum drain-source voltage (Vds) of 550V. In addition, the transistor has a low on-resistance, meaning that it produces less heat when operated at higher currents. The excellent thermal performance of the STF9NM50N makes it suitable for use in high-power, high-temperature applications.The working principle of the STF9NM50N is similar to other MOSFET transistors. It consists of an n-channel, meaning that current flow between the source and drain is controlled by the gate voltage. When a positive voltage is applied to the gate, electrons are attracted to the positive-charge region around the gate, creating a thin layer of electron-rich semiconductor material between the source and drain. This layer, known as the inversion layer, allows current to flow between the source and drain, thus turning the MOSFET "on". When the gate voltage is reversed, the inversion layer disappears and the current flow is cut off, turning the MOSFET "off".In conclusion, the STF9NM50N is an ideal choice for a wide range of power electronics applications. It offers excellent characteristics such as low on-resistance values and high current carrying capabilities, as well as a low threshold voltage for good switching performance. Finally, understanding the working principle of the STF9NM50N will help in optimizing its performance for specific applications.

The specific data is subject to PDF, and the above content is for reference

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