| Allicdata Part #: | 497-16421-2-ND |
| Manufacturer Part#: |
STH410N4F7-2AG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 40V H2PAK-2 |
| More Detail: | N-Channel 40V 200A (Tc) 365W (Tc) Surface Mount H2... |
| DataSheet: |  STH410N4F7-2AG Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | H2Pak-2 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 365W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 11500pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 141nC @ 10V |
| Series: | Automotive, AEC-Q101, STripFET™ F7 |
| Rds On (Max) @ Id, Vgs: | 1.1 mOhm @ 90A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 200A (Tc) |
| Drain to Source Voltage (Vdss): | 40V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The STH410N4F7-2AG is a single-channel, enhancement-mode (normally-off) power field-effect transistor (FET). This device is designed to minimise on-state resistance while providing superior switching performance, and is suitable for a variety of applications including power supply, motor control and pulse power supplies.
The STH410N4F7-2AG is specifically designed for high-current and high-speed power switching applications. It provides high efficiency and low power dissipation. This device has a maximum drain current of 24-A at 25°C and a maximum operating drain-source voltage of 40 V. In addition, it has a low gate-source voltage and a low on-resistance.
The working principle of the STH410N4F7-2AG is based on the basic MOSFET design. A voltage is applied to the gate terminal, which in turn controls the current between the drain and source terminals. When the gate voltage is low, the current between the drain and source terminals is blocked. When the gate voltage is increased, the drain current is allowed to flow, thus switching the device on. The maximum drain current is determined by the gate voltage applied to the device.
The main application field of the STH410N4F7-2AG is in power supplies, motor control and pulse power supplies. This device can be used in a variety of applications, such as dc-dc converters, motor controllers, AC servos, uninterruptible power supplies, welding machines and audio amplifiers. Due to its low on-state resistance, the STH410N4F7-2AG can also be used as a high-precision switch, allowing switching of high currents with minimal losses.
The STH410N4F7-2AG has a number of features which make it ideal for use in high-current applications. The device has a very low on-state resistance, ensuring minimal switching losses. In addition, the device has a maximum gate charging current of 5 mA and a low threshold voltage, making it suitable for use in low voltage systems. The device also has a temperature protection feature, preventing it from overheating when used under high-temperature conditions.
The STH410N4F7-2AG is a versatile device that can be used for a variety of applications. Its low on-state resistance, coupled with its high-current capability, makes it ideal for applications where power efficiency and speed are important. The device has a wide range of safety features, making it suitable for use in a variety of applications. In conclusion, the STH410N4F7-2AG is an ideal choice for use in high-current and high-speed power switching applications.
The specific data is subject to PDF, and the above content is for reference
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