STH410N4F7-6AG

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The STH410N4F7-6AG is a N-channel 400V (D-S), 5.5A (Tp-p) at 25C Power MOSFET that utilizes advanced trench technology to provide excellent RDS (ON), low gate charge, low thermal resistance level and superior avalanche characteristics. It is designed to be used in high performance switching power supply, PWM motor control and portable products. This device is available in TO-220FP package with the drain up configuration.

Application Field of STH410N4F7-6AG

The STH410N4F7-6AG is suited for a variety of applications, including low voltage switch mode power supplies, as well as motor and lighting control. It is suitable for working with AC and DC loads in switching mode applications. It can be used in other applications, such as DC motor drive, battery chargers, solar applications, industrial control and HVAC.

Working Principle of STH410N4F7-6AG

The working principle of the STH410N4F7-6AG is based on the idea of using electronic signals to control the drain source voltage by using a gate source voltage to regulate the amount of current flowing between drain and source. It uses a MOSFET to pass or block the current depending on the voltage applied to its gate. When the gate source voltage is high, the drain source voltage is discharged, allowing current to flow in one direction. When the gate source voltage is low, the drain source voltage is applied, blocking the current. The STH410N4F7-6AG MOSFET has a high breakdown voltage, allowing for greater current control.

The STH410N4F7-6AG utilizes a Zener voltage clamp to minimize the transient switching voltage. The Zener voltage clamp works by limiting the drain source voltage to a safe level. This allows for better control of the current through the MOSFET. It also enables the device to operate under higher drain source voltage.

The STH410N4F7-6AG MOSFET is also designed to have superior switching characteristics. This ensures a higher frequency operation, as well as better ridge conduction. It also provides greater thermal stability, enabling the device to handle larger power dissipation. The low on-resistance of the device also reduces power dissipation.

Conclusion

The STH410N4F7-6AG is a high performance power MOSFET that is suitable for low voltage switching mode power supplies, PWM motor control, as well as LED lighting control. It is designed to provide superior switching characteristics, low gate charge, low thermal resistance, superior avalanche characteristics and high breakdown voltage capability. The device utilizes advanced trench technology and a Zener voltage clamp to provide superior controllability and stable operation for a variety of applications.

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