STI6N62K3

Vgs(th) (Max) @ Id:	4.5V @ 50µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	90W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	875pF @ 50V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Series:	SuperMESH3™
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Tc)
Drain to Source Voltage (Vdss):	620V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STI6N62K3 Application Field and Working Principle

The STI6N62K3 is an N-channel silicon field-effect transistor (FET) fabricated using advanced the MOSFET (metal-oxide-semiconductor field-effect transistor) process. This makes it ideal for applications requiring high switching speeds and low on-resistance. It is also suitable for various other applications such as power management, analog switching, digital switching, and signal conditioning.The STI6N62K3 is designed with a low profile leadframe configuration, which makes it suitable for use in space-restricted electrical circuits. It is also designed for low inductance, which helps improve power efficiency. In addition, it offers excellent temperature stability, low noise, and low EMI (electromagnetic interference) profiles. It is available in both SMLCoop and SOT 8 packages.The gate of the STI6N62K3 operates as a voltage-controlled current source, which allows the current flowing through the drain to increase or decrease depending on the external voltage applied to the gate. This is referred to as the FET’s working principle. It is due to this unique design that enables the STI6N62K3 to provide high switching speeds and low on-resistance. The working of a FET is based on the concept of the “field effect”, where an applied electrical field across the bulk of the semiconductor can change the capacitance across the junction.The field-effect is created by applying a larger amount of forward bias to the gate with respect to the source. This in turn reduces the resistance of the relay between the source and the drain. As the gate voltage is increased, this reduces the resistance of the relay even further, which in turn increases the current flowing to the drain. This is why it is important for the source-drain current to be at its highest when the relay is at its low resistance value.The STI6N62K3 has many important applications. It is commonly used in power management, power regulation, switching power supplies, and other analog applications. Thanks to its low profile leadframe configuration and its excellent EMI profile, it also has multiple applications in low-noise industrial environments. The STI6N62K3 is also used in many consumer applications, such as home theater systems, personal computer peripherals, cellular phones, and digital cameras. The STI6N62K3 is a versatile transistor and can be used in a variety of applications. In conclusion, the STI6N62K3 is an advanced silicon field-effect transistor that is suitable for a variety of applications. It utilizes a low profile leadframe configuration and offers excellent temperature stability, low noise, and low EMI profiles. The working principle of the STI6N62K3 allows for high switching speeds and low on-resistance, enabling it to be used for many different applications. It is an ideal choice for power management, power regulation, switching power supplies, and other analog applications due to its low-profile, low noise, and excellent EMI profile.

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