STI6N80K5 Allicdata Electronics
Allicdata Part #:

497-15017-5-ND

Manufacturer Part#:

STI6N80K5

Price: $ 0.92
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 4.5A I2PAK
More Detail: N-Channel 800V 4.5A (Tc) 85W (Tc) Through Hole I2P...
DataSheet: STI6N80K5 datasheetSTI6N80K5 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.83201
Stock 1000Can Ship Immediately
$ 0.92
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 85W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 100V
Vgs (Max): 30V
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STI6N80K5 is an N-channel MOSFET owned by Vishay, a market leader in the semiconductor industry. This MOSFET is known for its low on-resistance and its small total gate charge. With its low on-resistance and its robust package, the STI6N80K5 is widely used in power conversion and switching activities such as in power converters, as well as in consumer electronics devices, industrial and computer applications.

The STI6N80K5 features a maximum current rating of 8A and voltage ratings of drain-source of 800V / 500V. This allows it to be used in a variety of applications. Some examples include TV, LCD screens, audio and video players, amplifiers, motor drives, solar systems, air conditioners, microwave ovens and induction cookers. It can also be used for improved protection and reliability in consumer products and printers.

Working Principle

The STI6N80K5 is an N-channel insulated gate field effect transistor (IGFET). It works on the principle that when a positive voltage is applied to the gate, then the channel between the source and drain will be "open", allowing current to flow from the drain to the source. A negative voltage will cause the channel to be "closed", blocking the current to flow.

In addition, the STI6N80K5 has two operating modes: enhancement-mode and depletion-mode. In the enhancement-mode, a positive voltage applied to the gate will turn on the MOSFET. This mode is used in medium to low power switching applications. In the depletion-mode, a negative voltage will turn on the MOSFET and is mainly used for high power applications such as motor control and rectifiers.

The STI6N80K5 also has low gate charge. This means that it requires minimal current to switch it on and off. This feature makes the STI6N80K5 the ideal choice for applications that require switching at high frequencies. Additionally, the STI6N80K5 has a low on-state resistance that results in improved power efficiency.

Conclusion

The Vishay STI6N80K5 is an N-channel MOSFET with a maximum current rating of 8A and its low on-resistance and robust package make it the ideal choice for use in power converters, consumer electronics devices, industrial and computer applications. It works on the principle that when a positive voltage is applied to the gate, then the channel between the source and drain will be "open", allowing current to flow from the drain to the source. Additionally, the STI6N80K5 has a low gate charge, which means that it requires minimal current to switch it on and off. With its wide range of features and applications, the STI6N80K5 is the perfect choice for those looking for a high quality MOSFET solution.

The specific data is subject to PDF, and the above content is for reference

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