Allicdata Part #: | 497-6325-2-ND |
Manufacturer Part#: |
STK822 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 25V 38A POLARPAK |
More Detail: | N-Channel 25V 38A (Ta) 5.2W (Ta) Surface Mount Pol... |
DataSheet: | STK822 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | STripFET™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 25V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.15 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 4.5V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 6060pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 5.2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PolarPak® |
Package / Case: | PolarPak® |
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STK822 is a field-effect transistor (FET) that is used in various application fields as its power levels and thermal characteristics make it suitable for high-frequency applications. This MOSFET has a single drain, source, and gate feature, making it one of the more versatile transistors available on the market today. This article seeks to explore its application field, as well as its working principle.
Application Field
The STK822 is classified as a N-type MOSFET and can be used in a variety of applications. Its low thermal resistance and low power levels make it appropriate for use in low-loss circuits at high-frequency operation. It also possess excellent in common-gate applications. It is most commonly used in high-frequency power conversion applications such as small-signal amplifiers, switch-mode power supplies, inverters, and motor control circuits. It can also be used in automotive power steering and air conditioning systems for controlling power utilisation. Additionally, its high-voltage gain and large switching times make it appropriate for switching power circuits.
Working Principle
When the STK822 is in use, current flow is controlled by applying a voltage to the gate terminal. When the gate voltage is applied, a depletion region between the drain and source forms, thereby regulating the flow of current. The amount of current that can flow is then determined by the voltage that is applied to the gate terminal. The higher the voltage, the smaller the conductive area, and the less current that is allowed to flow. The lower the voltage, the greater the conductive area, and the more current flowing.
The main advantage of the STK822 is its low power consumption levels. This allows the transistor to be used in high-frequency applications, where there is limited power available. The transistor also has a low threshold voltage, making it ideally suited for common-gate applications. The STK822 also has a high breakdown voltage and a higher resistance to thermal stress and overloads.
Conclusion
In conclusion, the STK822 is an ideal single-gate FET for high-frequency applications. Its low power levels and resistance to thermal stress make it suitable for a variety of application fields, both in the automotive and power conversion sectors. Its working principle is also suited for common-gate applications, due to its low threshold voltage. Finally, its high breakdown voltage and resistance to overloads and thermal shock make it a reliable choice for high-frequency power conversion circuits and motor control systems.
The specific data is subject to PDF, and the above content is for reference
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