STK850

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STK850 is an N-Channel, enhancement-mode power MOSFET with a large and rugged die. It has an on-resistance RDS(ON) in the range of 12-17 mΩ and the maximum drain-source voltage of up to 650V. The STK850 is manufactured by STMicroelectronics, one of the market leaders in semiconductor solutions.

The STK850 is used in a wide range of applications, including power supplies, lighting, motor control, and consumer electronics. It is particularly well suited for applications where high current is required, such as LED lighting. Its high RDS(ON) makes it an ideal switch for high-frequency applications.

The STK850 works on a negative drain-source voltage. The gate is connected with the source and a negative voltage is applied to the gate, causing it to be pulled low. This will ultimately causes a current flowing through the drain-source channel. The channel current is then applied to the load, allowing for a controllable current.

The design of the STK850 helps reduce switching loss and reduce gate charge. The presence of a Schottky barrier diode helps reduce the voltage spike generated when the MOSFET is switched OFF, thus improving efficiency. The package layout of the STK850 also helps reduce thermal resistance.

The STK850 is a reliable MOSFET with a rugged die and excellent performance. It is used in a variety of applications where high current is required and it is able to handle a variety of drain-source voltages. With its high RDS(ON) and excellent design features, the STK850 is an excellent choice for your power supply and lighting applications.

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