STL66DN3LLH5

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STL66DN3LLH5 is an array of N-channel power metal-oxide-semiconductor field-effect transistors (MOSFETs). This array has a low on-resistance specification of 66 mΩ, which means that it can handle higher current ratings for a given load. Additionally, the array features improved switching times of 16 ns, which allows it to operate more efficiently in power-sensitive applications.

The STL66DN3LLH5 is widely used in a variety of applications such as electric vehicles, electricity grid, motor controllers, and rectifiers. Additionally, this array is also suited for renewable energy systems and power converters. For such applications, this array is ideal, as it has a low on-resistance and quick switching times, which allows handlers to reduce power losses and maintain higher efficiency.

The main working principle of the STL66DN3LLH5 is based on the MOSFETs which are the main component of the array. The MOSFETs are two-terminal devices that contain highly doped, semi-conductive materials, such as silicon. When a voltage difference is applied between the two terminals, an electric field is created that causes a current to pass through the device.

The MOSFETs in the STL66DN3LLH5 are designed to control the current flowing throughout the load, making them an ideal choice for applications that require fast switching times and high current ratings. Additionally, the drain-to-source voltage (V DS ) and gate-to-source voltage (V GS ) of the array can be adjusted to obtain the desired effect, enabling users to customize their applications.

In summary, the STL66DN3LLH5 is an array of N-channel MOSFETs that has a low on-resistance specification of 66 mΩ and improved switching times of 16 ns. This makes it an ideal choice for applications that require fast switching times and high current ratings, such as electric vehicles, rectifiers, and power converters. Additionally, this array provides users the ability to customize their applications by adjusting the drain-to-source voltage (V DS ) and gate-to-source voltage (V GS ).

The specific data is subject to PDF, and the above content is for reference