Allicdata Part #: | 497-5246-2-ND |
Manufacturer Part#: |
STL60NH3LL |
Price: | $ 0.79 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 16A PWRFLAT6X5 |
More Detail: | N-Channel 30V 30A (Tc) 60W (Tc) Surface Mount Powe... |
DataSheet: | STL60NH3LL Datasheet/PDF |
Quantity: | 12000 |
3000 +: | $ 0.71889 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (6x5) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1810pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STL60NH3LL is a single N-channel power field-effect transistor (FET) that is ideal for a variety of applications. This reliable FET has a high current-carrying capability, low ON-resistance, and low gate-source voltage. It is designed for operating in harsh environments and is especially useful for general purpose switching, overcurrent protection, and logic level to voltage level translation. It can also be used for driving LEDs, LCDs, and other power-consuming electronics.
The STL60NH3LL consists of an N-channel power field-effect transistor that has been designed to provide superior switching performance. The power FET has a low-voltage drain-to-source breakdown voltage (VDSS), which allows it to be used in a variety of applications, such as in mobile phones, home appliances, displays and environmental monitoring systems. It also features a low reverse transfer capacitance, making it suitable for high-frequency switching applications. The FET’s low-voltage requirements allow it to be used in a wide range of voltage supplies.
The STL60NH3LL works on the principle of metal-oxide-semiconductor field-effect transistor (MOSFET)technology. This technology is based on the fact that current is allowed to freely flow between source and drain when the gate voltage is higher than the threshold voltage. The device is normally in the OFF state. When the gate voltage is higher than the threshold voltage, the device is switched ON and the current flows through the channel.
The STL60NH3LL employs a planar N-channel FET structure, which allows it to deliver a high current capability and low ON-resistance. The FET also features a small package size and low power consumption, making it a popular choice among system designers. The device also features a low gate threshold voltage, which allows it to be used in low-voltage applications.
The STL60NH3LL offers numerous advantages in terms of speed, reliability and efficiency. It is ideal for switching large currents, as well as for driving high-power devices such as motors. The low gate IR drop and low reverse transfer capacitance also reduces efficiency degradation in high-frequency applications. The device also exhibits a low static power consumption, allowing it to be used in applications where low standby power is critical.
In conclusion, the STL60NH3LL is a high-performance, single N-channel power field-effect transistor. It is reliable, efficient and capable of operating in a wide range of voltage supplies. The device excels in high-frequency switching applications and can be used for driving various power-consuming electronics.
The specific data is subject to PDF, and the above content is for reference
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