STL60NH3LL Allicdata Electronics
Allicdata Part #:

497-5246-2-ND

Manufacturer Part#:

STL60NH3LL

Price: $ 0.79
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 16A PWRFLAT6X5
More Detail: N-Channel 30V 30A (Tc) 60W (Tc) Surface Mount Powe...
DataSheet: STL60NH3LL datasheetSTL60NH3LL Datasheet/PDF
Quantity: 12000
3000 +: $ 0.71889
Stock 12000Can Ship Immediately
$ 0.79
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (6x5)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1810pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STL60NH3LL is a single N-channel power field-effect transistor (FET) that is ideal for a variety of applications. This reliable FET has a high current-carrying capability, low ON-resistance, and low gate-source voltage. It is designed for operating in harsh environments and is especially useful for general purpose switching, overcurrent protection, and logic level to voltage level translation. It can also be used for driving LEDs, LCDs, and other power-consuming electronics.

The STL60NH3LL consists of an N-channel power field-effect transistor that has been designed to provide superior switching performance. The power FET has a low-voltage drain-to-source breakdown voltage (VDSS), which allows it to be used in a variety of applications, such as in mobile phones, home appliances, displays and environmental monitoring systems. It also features a low reverse transfer capacitance, making it suitable for high-frequency switching applications. The FET’s low-voltage requirements allow it to be used in a wide range of voltage supplies.

The STL60NH3LL works on the principle of metal-oxide-semiconductor field-effect transistor (MOSFET)technology. This technology is based on the fact that current is allowed to freely flow between source and drain when the gate voltage is higher than the threshold voltage. The device is normally in the OFF state. When the gate voltage is higher than the threshold voltage, the device is switched ON and the current flows through the channel.

The STL60NH3LL employs a planar N-channel FET structure, which allows it to deliver a high current capability and low ON-resistance. The FET also features a small package size and low power consumption, making it a popular choice among system designers. The device also features a low gate threshold voltage, which allows it to be used in low-voltage applications.

The STL60NH3LL offers numerous advantages in terms of speed, reliability and efficiency. It is ideal for switching large currents, as well as for driving high-power devices such as motors. The low gate IR drop and low reverse transfer capacitance also reduces efficiency degradation in high-frequency applications. The device also exhibits a low static power consumption, allowing it to be used in applications where low standby power is critical.

In conclusion, the STL60NH3LL is a high-performance, single N-channel power field-effect transistor. It is reliable, efficient and capable of operating in a wide range of voltage supplies. The device excels in high-frequency switching applications and can be used for driving various power-consuming electronics.

The specific data is subject to PDF, and the above content is for reference

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