STL60N10F7

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The STL60N10F7 is an N-channel enhancement mode power field-effect transistor (FET). This device features good drain-source characteristics, high breakdown voltage and low On-resistance. The device has two source terminals: one being normal source, while the other being blank terminal. The source terminal is used as the control electrode.

The STL60N10F7 is typically used in applications requiring low on-state resistance, high-power switching and minimal heat dissipation. Such applications include power conversion and power distribution, high-side and low-side switch circuits and switch mode power supply (SMPS) circuits.

The working principle of the STL60N10F7 is based on the use of electric fields to control current flow. The device consists of a p-gate N-channel MOSFET, which has an insulated gate from the source to the drain. When an adequate voltage is applied to the gate terminal, an electric field develops which attracts electron carriers from the source region, resulting in an increase in the current between the drain and the source.

The STL60N10F7 may be connected in three operating modes: enhancement mode, depletion mode and linear mode. In enhancement mode, the FET is off at zero gate-source volts, and the gate-source voltage must be positive for the FET to be operational. In depletion mode, the FET is on at zero gate-source volts and the gate-source voltage must be negative for the FET to be operational. In linear mode, the FET operates in a linear fashion, with drain current increasing as the gate-source voltage is increased.

The STL60N10F7 can be wired into a bridge configuration, which controls the polarity of the source. This allows the device to be used as a switch between two power sources. In addition, due to its low on-resistance, the STL60N10F7 can be used as a high-side switch for high electric power applications.

Overall, the STL60N10F7 is a versatile Power FET, suitable for a wide range of power application designs. Its low on-resistance makes it suitable for high power applications and its insulated gate makes it suitable for use in bridge configurations. It is an ideal choice for any application requiring low on-state resistance, high-power switching and minimal heat dissipation.

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