STL6N2VH5 Discrete Semiconductor Products

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STL6N2VH5 is a high-voltage, high-current, insulated-gate, enhancement-mode field effect transistor (FET). It is commonly used for switch, sensing, amplifier, and amplifier-switch applications. The device is designed with a planar structure and not to be used as an active component like ordinary bipolar transistors. It functions as a switch when gate voltage is applied, enabling the flow of electric current between the drain and source.

The single STL6N2VH5 FET is fabricated on a substrate of silicon. Its structure consists of three layers - the body, the gate, and the source - and each of these acts as its own insulated element. The gate is provided with a power supply in order to induce a thin film at the surface of the substrate. A positive voltage applied to the gate creates an electric field about the surface of the substrate. This electric field increases the conductivity of the channel and, thus, enables the flow of charge through it from the source to the drain.

The operating voltage range of STL6N2VH5 FETs is from 20 to 80V depending on the application. For example, when used as a switch, the maximum operating voltage depends on the component\'s application itself. The maximum drain current of STL6N2VH5 FETs depends on the drain to source voltage and the rated static drain to source on the component\'s datasheet.

In addition, the insulation junction of the component plays a significant role in its performance. The junction of the component hosts the majority of its electric field, which serves as a bipolar junction between the source and drain. The junction isolates the sensitive substrate from the environment, preventing any adverse effects on the device itself.

In some applications, the STL6N2VH5 FETs may need to be operated in reverse bias conditions. In this case, the FETs may be required to be hermetically sealed to ensure that no reverse electrical fields reach the sensitive substrate. If this is the case, there are many types of plastics available that can be used for a hermetic seal.

Finally, like all FETs, the STL6N2VH5 FETs are vulnerable to overshooting and zenering. To prevent this from occurring, it is important to use protective measures such as limiting the gate voltage across the device.

STL6N2VH5 FETs are extremely versatile components that play an important role in a variety of applications. They are an integral part of many electronic products and can be used in switch, sensing, amplifier, and amplifier-switch applications. Their physical structure and insulating junction make them resistive to overshooting and zenering, meaning they will provide reliable performance in a variety of conditions.

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