STL60N3LLH5

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STL60N3LLH5 Application Field and Working Principle

STL60N3LLH5 is a single-enhancement-mode vertical N-Channel MOSFET mainly used in the fields of power switches, logic level shifters, and low-frequency power inverter circuits. It offers low on-resistance, low gate threshold voltage, high switching speed, and excellent avalanche characteristics, and is highly suitable for high-frequency switching application.

Specification and Pin Layout

STL60N3LLH5 is available in a TO-220-3L package, with Gate-Source voltage (Vgs) of ±30V and Channel-Source voltage (Vdss) of 50V. Its Channel-Drain current maximum rating is 6A, while its Peak drain current is 180A and its incremental Drain-Source on-state resistance is 0.009Ω, which makes it suitable for use in low-voltage, high-current applications. The drain-source breakdown voltage is 60V with tolerance of 2V, while its Gate-Source breakdown voltage (BVgs) is ±30V.

The pin layout of the device is as follows: Pin 1 is Drain, Pin 2 is Source and Pin 3 is Gate. It should be noted that the Source connects to the circuit’s ground and the Gate provides the control voltage that determines whether the device is turned on or off.

Working Principle

MOSFETs, such as STL60N3LLH5, are transistor-type devices composed from three basic elements: the source, the gate, and the drain. The source and the drain are terminals of the conducting material (usually n-type silicon or polysilicon) while the gate is insulated from the conducting material. A voltage applied to the gate voltage controls the source-drain current. When the voltage at the gate is above the specified threshold voltage (V TP ) the MOSFET is “on”, i.e. there is current flow between source and drain. When the gate voltage is lower than the threshold voltage, the MOSFET is “off” and there is no current flow between the source and drain. In practical MOSFETs application, the gate is further protected and isolated from the channel through the use of a gate dielectric.

Conclusion

STL60N3LLH5 is a single-enhancement-mode vertical N-Channel MOSFET mainly used in the fields of power switches, logic level shifters, and low-frequency power inverter circuits. It offers low on-resistance, low gate threshold voltage, high switching speed, and excellent avalanche characteristics, and is highly suitable for high-frequency switching application. Its Gate-Source voltage (Vgs) is ±30V, while its Channel-Source voltage (Vdss) is 50V. Its Channel-Drain current maximum rating is 6A, while its Peak drain current is 180A and its incremental Drain-Source on-state resistance is 0.009Ω. In order for the MOSFET to operate, a voltage needs to be applied to the gate, so as to control the source-drain current and thus control whether the device is turned on or off.

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