STS2DNF30L Allicdata Electronics

STS2DNF30L Discrete Semiconductor Products

Allicdata Part #:

497-12799-2-ND

Manufacturer Part#:

STS2DNF30L

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET 2N-CH 30V 3A 8SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 30V 3A 2W Surface ...
DataSheet: STS2DNF30L datasheetSTS2DNF30L Datasheet/PDF
Quantity: 5000
2500 +: $ 0.25773
Stock 5000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Base Part Number: ST*2DNF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2W
Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 110 mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 30V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Not For New Designs
Packaging: Tape & Reel (TR) 
Description

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STS2DNF30L Application Field and Working Principle

The purpose of the STS2DNF30L is to provide a power switching solution that can be used in commercial, industrial, and consumer electronic applications. The device is an insulated-gate bipolar transistor (IGBT) N-channel MOSFET array with four or six switching elements integrated onto a single silicon chip. The array is built using a combination of metal-oxide-semiconductor (MOS) field-effect transistors (MOSFET) and bipolar transistors to switch the device on. The insulated gate of the IGBT ensures the transistor stays on without any load current, allows for higher frequencies of switching operation, and helps to reduce the active switching losses of the device.

The STS2DNF30LR is well-suited for applications such as motor control, switch mode power supplies, and lighting control. The device features low gate voltage drive, low RDS(ON), and fast switching capability, making it suitable for a range of applications. The MOSFET array allows for more efficient control and more uniform current sharing among each switching element. The device is also rated for operating temperatures up to 150°C.

Working Principle of STS2DNF30L

The STS2DNF30L is a four- or six-channel MOSFET array, consisting of an insulated-gate bipolar transistor (IGBT) N-channel MOSFET. The device utilizes a combination of MOSFET and bipolar transistors to switch the current on. The insulated gate of the IGBT prevents any load current from flowing and keeps the transistor in the on-state. As the gate voltage is applied, a charge carriers are injected through the gate oxide of the MOSFET and into the channel, forming a conducting channel and permitting current to flow between the source and drain. The array is capable of carrying currents up to 2.4A and has a maximum drain-source voltage of 30V. The device also features fast switching times which makes it suitable for use in applications such as motor control, switch mode power supplies, and lighting control.

The STS2DNF30L is capable of controlling a variety of loads, including resistive, inductive, and capacitive loads. The MOSFET array allows for more efficient control and more uniform current sharing among each switching element. The device also features low gate threshold voltage and low RDS(ON) to reduce power losses.

The STS2DNF30L is an ideal choice for those applications requiring efficient, high-frequency switching. Its combination of high current carrying capacity, low RDS(ON), and fast switching time make it an ideal solution for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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