STS2DNF30L Discrete Semiconductor Products |
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Allicdata Part #: | 497-12799-2-ND |
Manufacturer Part#: |
STS2DNF30L |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET 2N-CH 30V 3A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 3A 2W Surface ... |
DataSheet: | STS2DNF30L Datasheet/PDF |
Quantity: | 5000 |
2500 +: | $ 0.25773 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Base Part Number: | ST*2DNF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 121pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 4.5nC @ 10V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 1A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A |
Drain to Source Voltage (Vdss): | 30V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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STS2DNF30L Application Field and Working Principle
The purpose of the STS2DNF30L is to provide a power switching solution that can be used in commercial, industrial, and consumer electronic applications. The device is an insulated-gate bipolar transistor (IGBT) N-channel MOSFET array with four or six switching elements integrated onto a single silicon chip. The array is built using a combination of metal-oxide-semiconductor (MOS) field-effect transistors (MOSFET) and bipolar transistors to switch the device on. The insulated gate of the IGBT ensures the transistor stays on without any load current, allows for higher frequencies of switching operation, and helps to reduce the active switching losses of the device.
The STS2DNF30LR is well-suited for applications such as motor control, switch mode power supplies, and lighting control. The device features low gate voltage drive, low RDS(ON), and fast switching capability, making it suitable for a range of applications. The MOSFET array allows for more efficient control and more uniform current sharing among each switching element. The device is also rated for operating temperatures up to 150°C.
Working Principle of STS2DNF30L
The STS2DNF30L is a four- or six-channel MOSFET array, consisting of an insulated-gate bipolar transistor (IGBT) N-channel MOSFET. The device utilizes a combination of MOSFET and bipolar transistors to switch the current on. The insulated gate of the IGBT prevents any load current from flowing and keeps the transistor in the on-state. As the gate voltage is applied, a charge carriers are injected through the gate oxide of the MOSFET and into the channel, forming a conducting channel and permitting current to flow between the source and drain. The array is capable of carrying currents up to 2.4A and has a maximum drain-source voltage of 30V. The device also features fast switching times which makes it suitable for use in applications such as motor control, switch mode power supplies, and lighting control.
The STS2DNF30L is capable of controlling a variety of loads, including resistive, inductive, and capacitive loads. The MOSFET array allows for more efficient control and more uniform current sharing among each switching element. The device also features low gate threshold voltage and low RDS(ON) to reduce power losses.
The STS2DNF30L is an ideal choice for those applications requiring efficient, high-frequency switching. Its combination of high current carrying capacity, low RDS(ON), and fast switching time make it an ideal solution for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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