STS26N3LLH6 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.7W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4040pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 4.5V
Series:	DeepGATE™, STripFET™ VI
Rds On (Max) @ Id, Vgs:	4.4 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	26A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The STS26N3LLH6 is a dual N-channel, enhanced mode, power enhancement field effect transistor (FET). It is a single discrete, three pin device in a TO261 package. This FET is designed specifically for power control and conversion applications and is considered a high performance alternative to MOSFETs. The STS26N3LLH6 is a single transistor, as opposed to multiple transistors connected in parallel, and has a low on-resistance for both the source and drain terminals at normal operating temperatures. This low on-resistance allows the STS26N3LLH6 to offer increased current handling capability, higher output power, and faster switching speed than other FETs.The STS26N3LLH6 features an integrated cooling system that comprises of a manufactured baseplate and a heatsink. The heatsink dissipates the excess heat generated by the device and helps to maintain the desired working temperatures. This allows the FET to operate reliably at higher power levels and reduces the need for additional cooling methods and designs.The STS26N3LLH6 is an ideal device for power control applications such as motor controllers, bridge circuits, and power converters. The FET\'s increased drive current and fast switching speed enable the device to quickly respond to changing loads and ensure a smooth, steady power delivery. Additionally, the low on-resistance, helps increase the efficiency of the power control circuit by minimizing power losses. In addition to power control applications, the STS26N3LLH6 can also be used for switching applications. Its fast switching speeds enable the device to accurately and quickly control the on/off cycles of a load. This makes the device suitable for switch mode power supplies and high frequency switching applications. The FET\'s integrated cooling system also helps improve the reliability and performance of the device in these applications. The STS26N3LLH6 is designed to operate within a broad voltage range of 4.5V to 26V. It can also handle peak current upto 35A and provides a maximum drain-source breakdown voltage of 60V. All of these features make the STS26N3LLH6 a robust device capable of handling a wide range of power control and switching applications. The STS26N3LLH6 has an operating temperature range from -55°C to +175°C and its maximum junction temperature is +175°C. Its total gate charge is 78 nC, its maximum gate-source voltage is ±20V, and its RDS(ON) maximum is 11 mΩ for both the source and drain terminals. The STS26N3LLH6 is a versatile FET that is capable of handling a variety of power control and switching applications. Its integrated cooling system, fast switching speeds, and increased current handling capabilities make the device an ideal solution for many power management applications. The STS26N3LLH6 is one of the most reliable FETs available and is designed to operate in the harshest of environments. In summary the STS26N3LLH6 is a single, three pin device in a TO261 package. It is designed specifically for power control and conversion applications, and has a low on-resistance for both the source and drain terminals at normal operating temperatures. This device features an integrated cooling system and fast switching speeds which enable it to quickly respond to changing loads and ensure a smooth, steady power delivery. The STS26N3LLH6 is the ideal device for power control and switching applications, operating within a range of 4.5V to 26V, and providing a maximum drain-source breakdown voltage of 60V. All of these features make the STS26N3LLH6 one of the most reliable and robust FETs available.

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