STS25NH3LL-E Discrete Semiconductor Products |
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Allicdata Part #: | 497-4395-2-ND |
Manufacturer Part#: |
STS25NH3LL-E |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 25A 8-SOIC |
More Detail: | N-Channel 30V 25A (Tc) 3.2W (Tc) Surface Mount 8-S... |
DataSheet: | STS25NH3LL-E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4450pF @ 25V |
Vgs (Max): | ±18V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
Series: | STripFET™ III |
Rds On (Max) @ Id, Vgs: | 3.5 mOhm @ 12.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STS25NH3LL-E is a single n-channel MOSFET. It belongs to the STS family of Through-Hole Transistors, with a maximum voltage rating of 30V and a maximum current rating of 3A. The FET is designed for power management, DC-DC converters, or other low-voltage switching applications, and it offers a good combination of both efficiency and cost.
The MOSFET is a metal-oxide-semiconductor field-effect transistor. It works by relying on an electric field to control the current, rather than a gate voltage. In other words, it is a unipolar transistor, meaning that it uses only one type of charge carrier, which is electrons. Essentially, the MOSFET acts as a switch.
The STS25NH3LL-E MOSFET consists of a semiconductor channel and a metal gate. When a voltage is applied to the gate, it induces a conductive channel in the semiconductive material, which then allows current to flow between the source and drain electrodes.
When the voltage is removed from the gate, the resistance between the source and drain increases, preventing current from passing through. The resistance between the source and drain is referred to as the “on-state” resistance or the “channel resistance”, and it is typically very low, meaning that the MOSFET is very efficient at carrying current.
One major advantage of the STS25NH3LL-E MOSFET is its high switching speed, thanks to its p-channel architecture. This means that it is able to switch very quickly and with minimal power loss, enabling it to be used in a wide range of applications.
The STS25NH3LL-E MOSFET is well-suited for use in the power management of automotive and consumer electronics, as well as DC-DC conversion. It can also be used in area lighting applications, such as LED products, where it can help control the current flow to the desired level.
In summary, the STS25NH3LL-E is a single n-channel MOSFET designed for power management, DC-DC conversion, and LED area lighting applications. It is characterized by its high switching speed, low on-state resistance, and moderate voltage rating, making it an ideal choice for these types of applications.
The specific data is subject to PDF, and the above content is for reference
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