STS2DPFS20V Discrete Semiconductor Products |
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Allicdata Part #: | 497-3225-2-ND |
Manufacturer Part#: |
STS2DPFS20V |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET P-CH 20V 2.5A 8-SOIC |
More Detail: | P-Channel 20V 2.5A (Tc) 2W (Tc) Surface Mount 8-SO |
DataSheet: | STS2DPFS20V Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 600mV @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 2W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 15V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 4.5V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 1A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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STS2DPFS20V Application Field and Working Principle
STS2DPFS20V is a single MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is a low-capacitance, high-frequency, high-density device that is suitable for use in a variety of applications. In this article, we will discuss the application field and working principle of the STS2DPFS20V.
Application Field
The STS2DPFS20V is a versatile MOSFET that can be used in a variety of applications. It can switch on/off higher voltages and provide protection against transient spikes. Its low input capacitance makes it well-suited for fast pulsed controls. The low power-loss figures ensure that the device does not suffer from overheating.
In addition, it can also be used in inverter applications, especially motor control. It is also used in smps (switch mode power supplies) and other DC/DC converters. Furthermore, it can be used in signal level translation and level-shifting. Lastly, it can be used in other applications where very low control currents are involved.
Working Principle
The MOSFET is a three-terminal device constructed from a porous semiconductor material (silicon) and a dielectric insulation layer (silicon dioxide). An input voltage is applied to the gate of the device and a current flows from the drain to the source. The gate-source voltage controls the drain current and thus can be used to render the MOSFET turn-on and turn-off. Therefore, the device acts as a switch for current flow.
The STS2DPFS20V MOSFET is a N-channel device, meaning that the logic low (zero volts) will open the switch and logic high (Vcc) will close the switch. The device has a gate-source threshold voltage of 20 volts, meaning that the gate-source voltage must be higher than 20 volts in order to turn-on the device. The device also has a maximum Drain-Source breakdown voltage of 75 volts, making it suitable for switching higher voltages.
In addition to its low input capacitance, the device also features low internal resistance (Rds). This allows the device to draw more current while dissipating less heat and generating fewer noise signals. It also has a low on-resistance, meaning that it can handle more power dissipation with lower losses.
Thus, the STS2DPFS20V MOSFET is a versatile device with low losses and high frequency capabilities, making it perfect for a range of applications across various industries.
The specific data is subject to PDF, and the above content is for reference
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