STS2DPF80 Allicdata Electronics

STS2DPF80 Discrete Semiconductor Products

Allicdata Part #:

497-8040-2-ND

Manufacturer Part#:

STS2DPF80

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET 2P-CH 80V 2A 8SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 80V 2A 2.5W Surfac...
DataSheet: STS2DPF80 datasheetSTS2DPF80 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Base Part Number: ST*2DPF
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 2.5W
Input Capacitance (Ciss) (Max) @ Vds: 739pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A
Drain to Source Voltage (Vdss): 80V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The STS2DPF80 is a single-chip field effect transistor (FET) array capable of operating at high current densities, fast switching speeds and a wide dynamic range. It is based on an advanced charging and discharging transistor (CDT) structures, which are the most commonly used in the field effect transistor (FET) array industry. In this article, we will discuss the application field and working principle of the STS2DPF80.The STS2DPF80 is mainly used for high-speed and high-power applications such as power amplifiers, servers, personal computers, and high-end digital signal processors (DSPs). It has a wide dynamic range and is capable of operating at very high current densities, which makes it ideal for applications that require precise switching and precise control over the output of the device.The STS2DPF80 is based on a metal oxide silicon (MOS) structure and comprises two metal oxide semiconductor (MOSFET) transistors and two polysilicon resistors, as well as a capacitor/diode network. The MOSFETs are responsible for the low voltage and high current switching characteristics of the device, while the polysilicon resistors control the impedance and the current flow in the circuit. The capacitor/diode network serves as a buffer between the MOSFETs and provides a voltage reference for the device, and the overall circuit is configured as a complementary cascade FET (CCFET).The STS2DPF80 operates through a logic input system that consists of a logic-high input (VH) and a logic-low input (VL). When VH is applied, the MOSFETs are activated, creating a high current between the source and drain terminals. When VL is applied, the MOSFETs are shut off, resulting in a low output voltage between the source and drain terminals.The STS2DPF80 also has an adjustable speed control system, which allows it to be tailored to specific applications. The speed of the device can be adjusted by varying the voltage applied to the VH and VL inputs. For example, if a slower switching time is desired, the voltage applied to the VH input should be decreased, while the voltage applied to the VL input should be increased.Finally, the STS2DPF80 also utilizes a time-shift-control (TSC) system, which enables the device to remain in a steady state. This ensures that the device operates at a consistent speed regardless of the operating conditions. The TSC system also helps to improve the reliability of the device as it reduces the amount of power needed to maintain a steady state.In conclusion, the STS2DPF80 is a single-chip FET array with a wide dynamic range and a high current capability. It is capable of operating at high speeds and consuming low power, making it well suited for a variety of high-power applications. Its adjustable speed control and TSC circuitry help to ensure reliable operation in various conditions.

The specific data is subject to PDF, and the above content is for reference

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