Allicdata Part #: | 497-8041-2-ND |
Manufacturer Part#: |
STS4DNF60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET 2N-CH 60V 4A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 4A 2W Surface ... |
DataSheet: | STS4DNF60 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Base Part Number: | ST*4DNF |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 2W |
Input Capacitance (Ciss) (Max) @ Vds: | 315pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 10V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 2A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A |
Drain to Source Voltage (Vdss): | 60V |
FET Feature: | Logic Level Gate |
FET Type: | 2 N-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STS4DNF60 is a high power, p-channel MOSFET array designed to satisfy a wide range of applications in consumer, consumer industrial and automotive electronics. The device offers high reliability, excellent device saturation current level and high impedance, making it suitable for a variety of applications. This article will discuss the application field and working principle of the STS4DNF60.
Application Field
The STS4DNF60 is suitable for a wide range of applications such as switching loads up to 25A, motor control, power supplies, lighting and more. It is particularly suitable for load and battery switching applications. In short, it can be used wherever p-channel MOSFETs are required in moderate- to high-power applications such as battery and load switching when driving loads up to 25A.
Working Principle
The STS4DNF60 contains four independent p-channel MOSFETs in an inverter configuration. The device is fabricated using the SiGeHV7 process and is designed to switch currents with minimal conduction losses. Each device can handle up to 25A with an operating voltage of up to 60V and a gate voltage up to 20V. The gate-source voltage is typically 1V and the total gate charge is typically 6V. The device features low on-resistance of typ-15mohm, a low gate threshold voltage of typ-2V and maximum junction temperature of 175°C.
The device uses a symmetrical drain-source structure which allows for a low on-resistance, minimum gate charge and low gate threshold voltage. It has an internal temperature sensor that can be used to accurately monitor junction temperature and adjust current accordingly. The device also has a soft-start circuit that provides additional protection against inrush current.
Conclusion
The STS4DNF60 is a high power, p-channel MOSFET array designed for a variety of applications in consumer, consumer industrial and automotive electronics. The device offers high reliability, excellent device saturation current level and high impedance. It is suitable for switching loads up to 25A, motor control, power supplies, lighting and more. The device features low on-resistance of typ-15mohm, a low gate threshold voltage of typ-2V and maximum junction temperature of 175°C. It has an internal temperature sensor and a soft-start circuit that provides additional protection against inrush current.
The specific data is subject to PDF, and the above content is for reference
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