STS4DNF60L

STS4DNF60L is a vertical double-N-level field-effect (DNFET) transistor made with the improved advanced trench-gate process. It is a silicon transistor array consisting of 8 p-channel vertical MOSFETs. Developed by Taiwan Semiconductor, the STS4DNF60L helps to address the increasing demand for dense power management in low voltage, low power applications. It is designed to support a wide range of signal processing functions in portable devices, such as LCD displays, LED backlighting, notebook computers, digital audio players, medical devices, and power amplifiers.This device offers high performance in a small package, with a low total gate charge, double N-level design, low input capacitance, and operating temperature of -55°C to +125°C. It also features high input impedance which makes it suitable for radio frequency (RF) applications.The STS4DNF60L is classified as a field-effect transistor (FET). It makes use of the electric field effect to control the flow of electrons in a semiconductor material. FETs are divided into two categories: Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and Junction Field Effect Transistors (JFETs).MOSFETs are the most common type of FETs and are used in a variety of applications, from switching power supplies to amplifiers. The STS4DNF60L is a vertical double-N-level MOSFET transistor. This device consists of a silicon substrate and multiple electrodes connected to it. Two of these electrodes, called the gate and the drain, are electrically connected. When voltage is applied to the gate, it creates an electrostatic field in the channel that runs between the source and the drain. This field attracts electrons, creating a current between the two electrodes. As the voltage increases, the current between the source and the drain also increases. The double-N-level MOSFET transistor of the STS4DNF60L offers improved performance over single-N-level MOSFETs. This is because it has lower gate charge, input capacitance, and lower RDS (on) resistance.The STS4DNF60L is also a transistor array, which is composed of multiple interconnected transistors packaged together. Transistor arrays are often used in low voltage, low power applications, such as mobile phones, audio players, and other portable devices. The multiple transistors in a transistor array allow for more functionality, such as radio frequency (RF) signal processing and high switching speeds.In summary, the STS4DNF60L is a vertical double-N-level MOSFET transistor array designed for a wide range of low voltage and low power applications. This device offers high performance in a small package, with a low total gate charge, double N-level design, low input capacitance, and operating temperature of -55°C to +125°C. Its high input impedance makes it suitable for RF applications, and its multiple transistors offer more functionality.

STS4DNFS30	STMicroelect...	0.54 $	2500	MOSFET N-CH 30V 4.5A 8-SO...
STS4DNFS30L	STMicroelect...	0.0 $	1000	MOSFET N-CH 30V 4A 8-SOIC...
STS4DPFS30L	STMicroelect...	0.0 $	1000	MOSFET P-CH 30V 5A 8-SOIC...
STS4NF100	STMicroelect...	--	1000	MOSFET N-CH 100V 4A 8-SOI...
STS4DNF30L	STMicroelect...	0.0 $	1000	MOSFET 2N-CH 30V 4A 8SOIC...
STS4C3F60L	STMicroelect...	--	1000	MOSFET N/P-CH 60V 4A/3A 8...
STS4DPF30L	STMicroelect...	--	1000	MOSFET 2P-CH 30V 4A 8-SOI...
STS4DNF60	STMicroelect...	0.0 $	1000	MOSFET 2N-CH 60V 4A 8SOIC...
STS4DPF20L	STMicroelect...	0.0 $	1000	MOSFET 2P-CH 20V 4A 8SOIC...
STS4DNF60L	STMicroelect...	--	2500	MOSFET 2N-CH 60V 4A 8-SOI...