Allicdata Part #: | 497-6187-2-ND |
Manufacturer Part#: |
STS4DNFS30 |
Price: | $ 0.54 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 30V 4.5A 8-SOIC |
More Detail: | N-Channel 30V 4.5A (Tc) 2W (Tc) Surface Mount 8-SO |
DataSheet: | STS4DNFS30 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.48904 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 330pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 4.7nC @ 5V |
Series: | STripFET™ |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The STS4DNFS30 is a single N-channel differentially-clocked Field-Effect Transistor (FET). It is manufactured by Texas Instruments and is intended for use in low-noise RF applications such as cellular base stations and 3G and 4G wireless systems. The circuit topology and logic of the STS4DNFS30 allow it to provide a low VSWR and low harmonic distortion.
The STS4DNFS30 is constructed of a differential pair of complementary N-channel MOSFETs, also referred to as an H-bridge configuration. It requires both rising and falling clock edges to set the signal level which is applied to the sources. This type of configuration allows it to achieve low harmonic distortion due to its low output impedance.
The STS4DNFS30 has a wide range of operating voltages, with a maximum operating voltage of 30 V. It also features a low input capacitance and incremental current rating, which make it ideal for use with low-noise RF circuits. The STS4DNFS30 also features a low RDS(on) value, which is important for high-power applications.
The STS4DNFS30 is particularly useful in the areas of radio frequency (RF) signal conditioning, power amplification, and switching applications. It is also well suited for wideband circuits, as it can handle high frequency signals without degradation in performance. The circuit design of the STS4DNFS30 also allows for the use of negative voltages, which further enhances its ability to be used in a wide range of applications.
The working principle behind the STS4DNFS30 is based on the two transistors that make up the differential pair. When a signal is applied to the sources, a voltage differential is created between the drains. This voltage differential causes the transistors to switch on or off, depending on the logic levels of the inputs. The switching of the transistors results in the desired output.
The STS4DNFS30 is also capable of providing low noise levels, due to its low input capacitance. By utilizing an H-bridge design, the STS4DNFS30 is able to achieve high power delivery while maintaining a low noise level. Additionally, the low input capacitance allows it to have a wide bandwidth of operation.
The STS4DNFS30 is a versatile device that is suitable for a wide range of applications. It is ideal for low-noise RF systems such as cellular base stations and 3G and 4G wireless systems, as well as for power amplification and switching applications. Furthermore, it can handle high frequencies without affecting performance, thanks to its low RDS(on) value, and its low input capacitance further enhances its suitability for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
STS4DNFS30 | STMicroelect... | 0.54 $ | 2500 | MOSFET N-CH 30V 4.5A 8-SO... |
STS4DNFS30L | STMicroelect... | 0.0 $ | 1000 | MOSFET N-CH 30V 4A 8-SOIC... |
STS4DPFS30L | STMicroelect... | 0.0 $ | 1000 | MOSFET P-CH 30V 5A 8-SOIC... |
STS4NF100 | STMicroelect... | -- | 1000 | MOSFET N-CH 100V 4A 8-SOI... |
STS4DNF30L | STMicroelect... | 0.0 $ | 1000 | MOSFET 2N-CH 30V 4A 8SOIC... |
STS4C3F60L | STMicroelect... | -- | 1000 | MOSFET N/P-CH 60V 4A/3A 8... |
STS4DPF30L | STMicroelect... | -- | 1000 | MOSFET 2P-CH 30V 4A 8-SOI... |
STS4DNF60 | STMicroelect... | 0.0 $ | 1000 | MOSFET 2N-CH 60V 4A 8SOIC... |
STS4DPF20L | STMicroelect... | 0.0 $ | 1000 | MOSFET 2P-CH 20V 4A 8SOIC... |
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