STS4DPFS30L

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The STS4DPFS30L is a silicon N-channel enhancement-mode vertical DMOS transistor specifically optimized for advanced high current power applications. This vertical DMOS transistor is available in a TSSOP (Thin Shrink Small Outline Package) with a mid-power rating that bridges the development gap between mid power SOT-23 and high power TO-252 packages. Features of the STS4DPFS30L include a low gate charge and low gate resistance, which allow the unit to efficiently handle high frequencies and high drain current fast switching applications.

The STS4DPFS30L applies to a variety of applications, such as load switch and DC/DC converters, as well as high side switches for automotive body electronics. Its superior surge current capability makes it suitable for solar panel control, and its low RDS(on) makes it ideal for low voltage and high frequency power system design. The STS4DPFS30L is rated for 12 Volt and has a VDS (drain-source voltage) of 30 Volts, with a drain current rating of 5.9 Amps. The STS4DPFS30L integrates superior circuit protection from hot electrons, static discharge, and thermal runaway, making it an ideal device for high current drive applications.

The STS4DPFS30L is an improvement on the previously released TSSOP30-6N which had a more basic, lower current rating and higher resistance. The STS4DPFS30L replaces the 6N with a more efficient design with a lower RDS(on) and higher current rating. This improved efficiency makes the STS4DPFS30L more suitable for high current load switches, DC/DC converters, and other high current applications. The STS4DPFS30L also offers an improved thermal resistance, allowing the unit to handle more current with less heat.

The STS4DPFS30L is a vertical DMOS transistor, which uses a process called Vertical N-channel MOSFET. This means that the source is connected to the drain, which forms a channel and the channel controls current flow. The source and the drain do not switch, which helps reduce power losses. The MOSFET also has a gate, which is used to control the current flow. By applying a voltage to the gate, the MOSFET can control the amount of current flowing through the channel, effectively turning it on and off.

The STS4DPFS30L is designed using the latest process technology, which provides superior performance and reliability. This device is designed for high reliability applications and the robust design reduces the possibility of device failure. This device is manufactured using silicon on insulator (SOI) technology which produces a better performance by eliminating gate to drain shorts and eliminating second breakdowns.

The STS4DPFS30L also offers significantly better thermal performance than other products in the same family. The optimized die layout provides improved thermal transfer efficiency, which effectively dissipates heat more efficiently. This improved thermal performance allows the unit to operate more efficiently, with higher operating frequencies and other performance benefits.

The STS4DPFS30L is a unique product with a combination of features that make it well suited for use in a variety of high current applications. It is available in a TSSOP (Thin Shrink Small Outline Package) which is highly reliable and efficient. The improved features of the STS4DPFS30L make it an ideal device for high current applications such as load switch and DC/DC converters, as well as high side switches for automotive body electronics.

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