Allicdata Part #: | 497-8043-2-ND |
Manufacturer Part#: |
STS4NF100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 4A 8-SOIC |
More Detail: | N-Channel 100V 4A (Tc) 2.5W (Ta) Surface Mount 8-S... |
DataSheet: | STS4NF100 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.5W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 870pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | STripFET™ II |
Rds On (Max) @ Id, Vgs: | 70 mOhm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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STS4NF100 is a popular power field-effect transistor (FET) manufactured by STMicroelectronics. It is a high-voltage MOSFET that can easily be used in numerous applications and is suitable for use in automotive applications, industrial systems, and other applications where large amounts of power must be switched.
The STS4NF100 is constructed as an N-channel device. It is built with a depletion-mode Gate structure, meaning that it can be operated as a normally open switch or as a normally closed switch. The device is rated for high-voltage operation, and can operate with gate-source voltages up to 500V.
The STS4NF100 is designed for operation in linear applications, meaning that it can be used to control current in a variety of applications. It can be used as an electronic switch to control circuits, it can provide an electric field to improve the efficiency of power transmission, and it can be used to provide variable resistors or variable capacitors. It can also be used in other applications such as in medical imaging.
The STS4NF100 has a typical drain-source on-resistance (RDS(on)) of 0.8Ω, which is relatively low when compared to other FETs. This means that it can be used to control large amounts of power with relative ease, and is particularly suitable for applications where power dissipation must be minimized. It also has a low maximum drain-source voltage drop, which means that it does not dissipate much energy when in the on-state, resulting in greater efficiency.
The STS4NF100 operates with a maximum drain-source voltage of 400V, making it suitable for operations where very high voltages are required, such as in high-voltage power lines. Its maximum drain-source current is 25A, and its maximum power dissipation is 400W, which means that it can easily handle large amounts of power without the need for extra cooling.
The STS4NF100 is built with a low input capacitance and a low threshold voltage, which means that it can be used to switch signals quickly and accurately. Its high maximum frequency rating also makes it suitable for high-speed switching, and it has excellent thermal characteristics, making it suitable for high-temperature applications.
The STS4NF100 is extremely versatile and is suitable for a range of applications, including motor control, power supply, consumer electronics, automotive, and medical applications. It can be used to provide accurate control at high voltages and is able to handle large amounts of power. Its low drain-source on-resistance and its excellent thermal characteristics make it suitable for high-temperature and high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
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