STS9P2UH7 Allicdata Electronics
Allicdata Part #:

497-15155-2-ND

Manufacturer Part#:

STS9P2UH7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET P-CH 20V 9A 8-SOIC
More Detail: P-Channel 20V 9A (Tc) 2.7W (Tc) Surface Mount 8-SO
DataSheet: STS9P2UH7 datasheetSTS9P2UH7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: STripFET™
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 22.5 mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs (Max): ±8V
Input Capacitance (Ciss) (Max) @ Vds: 2390pF @ 16V
FET Feature: --
Power Dissipation (Max): 2.7W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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STS9P2UH7 Application Field and Working Principle

The STS9P2UH7 is a transistor device that belongs to the family of Transistors - Field Effect Transistors, or FETs. It is a single-gate MOSFET device, meaning it is a unidirectional device that is used to control the current flow in one direction. It is a static device, meaning no external signals are necessary for its operation. The STS9P2UH7 is commonly used in applications such as motor control and signal conditioning where high speed switching is needed.

Working Principle

The operation of the STS9P2UH7 is based on the traditional FET structure. The source terminal is a source of electrons, while the drain terminal is a sink for electrons. The Gate terminal controls the current flow between the source and the drain terminals. A positive voltage applied to the Gate terminal allows the current to flow between the source and the drain terminals, while a negative voltage applied to the Gate terminal prevents the current flow. The STS9P2UH7 uses a specialized Gate material for improved switching speed and better temperature stability.

Advantages

The STS9P2UH7 offers numerous advantages over traditional FETs such as increased switching speed and improved temperature stability. The faster switching speeds allow it to perform well in extremely demanding applications such as motor control and signal conditioning. Furthermore, the improved temperature stability ensures long-term stable operation, even in harsh operating conditions.

Applications

The STS9P2UH7 can be used in a variety of applications including motor control and signal conditioning. The faster switching speed of the device enables it to perform exceptionally well in demanding motor control applications where high switching frequencies are needed. Additionally, the improved temperature stability makes the device ideal for signal conditioning applications that require long-term stability. The STS9P2UH7 is also an excellent choice in electronic systems that require high current switching.

Conclusion

In conclusion, the STS9P2UH7 is a transistor device that belongs to the family of Transistors - Field Effect Transistors, or FETs. It is a single-gate MOSFET device and is commonly used in applications such as motor control and signal conditioning where high speed switching is needed. It offers numerous advantages such as increased switching speed and improved temperature stability. The STS9P2UH7 can be used in a variety of applications including motor control and signal conditioning.

The specific data is subject to PDF, and the above content is for reference

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