Allicdata Part #: | STS9P3LLH6-ND |
Manufacturer Part#: |
STS9P3LLH6 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET PCH 30V 9A SO8 |
More Detail: | P-Channel 30V 9A (Ta) 2.7W (Ta) Surface Mount 8-SO |
DataSheet: | STS9P3LLH6 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.7W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2615pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | STripFET™ H6 |
Rds On (Max) @ Id, Vgs: | 15 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The STS9P3LLH6 single FET is a three-terminal field effect transistor (FET) capable of conducting current from +3V to +30V, with a maximum continuous current rating of 4A. This FET is specially designed for high frequency switching applications and for driving high power loads. With its robust design, the STS9P3LLH6 ensures reliability and improved signal switching capability. It provides low RDS(on) values, achieving low power loss and high efficiency. Furthermore, the FET has a high input capacitance, providing better signal handling and high-speed switching options. In addition, the FET has temperature, static and dynamic characteristics that can help improve performance and durability.
The STS9P3LLH6 is widely used in applications that require high power and frequency switching such as battery chargers, converters, and motor drivers. Specifically, this FET is well-suited for low-noise audio systems, low voltage circles, and high-frequency switching in power control systems. Its advanced design makes it an ideal choice for those who want to improve their system\'s performance or reduce their power losses.
The working principle of the STS9P3LLH6 is simple and is based on the property of FETs to provide a low resistance path when a small amount of electric current is applied between the gate and the source (also known as drain-source forward-bias). Voltage applied to the gate causes this electric current to flow through the channel between the source and drain. This forms a conducting path between source and drain, and allows for current to flow through the transistor. The amount of current that the transistor can conduct is determined by the voltage applied to the gate, the voltage applied between the source and drain, and the load connected to the drain.
The STS9P3LLH6 is an advantageous FET choice for many applications due its high efficiency, noise reduction, and lower power losses. This FET also provides a higher linearity coefficient and higher current levels, with low gate charge and thermal resistance than many similar devices. Additionally, its solid performance can handle a wide range of operating frequencies, allowing users to switch between Vlp and Vhp without having to replace their FET.
This STS9P3LLH6 FET is well-suited to any application requiring a small-to-medium size FET capable of providing high-frequency switching and high power loads. It is a high-quality component that provides dependable and consistent performance in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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