STT5PF20V

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The STT5PF20V, also known as the Super Junction MOSFET, is a type of insulated-gate field-effect transistor that is mainly used in power electronic applications. The convenience of the Super Junction MOSFET is that it can be used to control high-power loads with smaller size compared to other type of power transistors. This article discusses the application field and working principle of the STT5PF20V.

Application Fields of STT5PF20V

The STT5PF20V is commonly used in a range of power electronic applications, such as solar and wind power equipment, power conversion, LED lighting, motor control, three-phase inverter and AC drives. It offers low on-state resistance and can also achieve higher efficiency. It also provide excellent switching performance and low switching loss.

The features of the STT5PF20V are especially ideal for applications involving high power loads or challenging switching conditions. In addition, its high current rating ensures that current spikes do not damage the device and its low gate charge makes it well-suited for high frequency switching applications. Furthermore, the STT5PF20V is ideal for high power supplies for non-isolated topologies, such as buck, boost,and two-switch forward.

Working Principle of STT5PF20V

The working principle of the STT5PF20V is based on the principle of insulated-gate field-effect transistors (IGFETs). The device consists of a gate, a source, and a drain. A small voltage applied to the gate of the device can control a large current between the source and the drain. This phenomenon is due to the electric field effect generated by the gate, which modulates the conductivity of the channel region between the source and the drain.

When a positive voltage is applied to the gate of the STT5PF20V, majority carriers (electrons or holes) are attracted towards the gate. Thus, a channel of carriers is formed between the source and the drain, and the transistor is now in the “on” state. The channel conducts current when the gate voltage is applied, allowing electrons to flow from the source to the drain.

When the gate voltage is reversed (i.e. made negative), the channel of carriers is depleted and the transistor is now in the “off” state. Thus, the transistor will block any current from flowing between the source and the drain.

In addition, the STT5PF20V also features a low gate charge, which reduces switching loss and increases the efficiency of the device. This is due to the fact that the low gate charge reduces the current flowing through the gate electrode. Thus, less energy is wasted and efficiency is increased.

Conclusion

In conclusion, the STT5PF20V is a type of insulated-gate field-effect transistor that is widely used for power electronic applications. It can be used to control high-power loads, making it ideal for applications such as solar and wind power equipment, power conversion, LED lighting, motor control and more. The device utilizes the electric field effect to modulate the conductivity of the channel region between the source and the drain, and it also features a low gate charge to reduce switching loss and increase the efficiency of the device.

The specific data is subject to PDF, and the above content is for reference