STU3N65M6

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The STU3N65M6 is a type of insulated gate field effect transistor (IGFET) from STMicroelectronics. It is a single-slope Power MOSFET which provides both high switching speed and low on-state resistance. The device has a wide operating temperature range and is well-suited for various applications such as power switching, DC-DC converters, battery charger control, and lighting applications.

The STU3N65M6 is a high-density power package which provides low on-state resistance. It has an extremely small footprint which allows designers to reduce board space. The device integrates a symmetrical N-channel MOSFET with a low gate-source threshold voltage and low total gate charge. It offers high operating frequencies with low switching losses. The device has extremely low gate-charge and low output capacitance. As such, the STU3N65M6 offers very low gate drain charge times and higher power dissipation.

The STU3N65M6 also features Logic-Level Gate Sensitivity, allowing for easier connections between the gate and control systems. It has low gate-drain coupling capacitance and improved avalanche immunity, minimizing the risk of electrical overstress. Additionally, the device comes with higher ESD tolerance, providing improved system reliability.

In terms of its application field, the STU3N65M6 can be used in many areas due to its low on-state resistance and its compatibility with low voltage control systems. It is used in various power switching and DC-DC converter applications, such as motor control, HVAC, white goods, and lighting. The device can also be used for battery charger control, providing a low on-state resistance. The STU3N65M6 is well-suited for applications which require lower on-state resistance and higher efficiency.

The STU3N65M6 works on the principle of insulated gate field effect transistor. The device consists of a symmetrical N-channel MOSFET and a low gate-source threshold voltage. The MOSFET provides low on-state resistance and the low threshold voltage allows for easier connections between the gate and the control systems. When a signal is applied to the gate, a current is induced in the MOSFET’s Drain-Source channel, resulting in a change in the drain-source voltage. This voltage change causes the MOSFET to switch on, allowing current to flow between the drain and source terminals.

The STU3N65M6 is a reliable and high-performance device which can be used in many applications due to its low on-state resistance and wide operating temperature range. It is suitable for power switching, DC-DC converters, battery charger control, and light controlling applications due to its low gate-charge and low output capacitance. The device allows for easier connection between the gate and the control systems and features a high degree of ESD tolerance for improved system reliability.

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