STU3N80K5 Allicdata Electronics
Allicdata Part #:

497-14223-5-ND

Manufacturer Part#:

STU3N80K5

Price: $ 1.31
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 2.5A IPAK
More Detail: N-Channel 800V 2.5A (Tc) 60W (Tc) Through Hole I-P...
DataSheet: STU3N80K5 datasheetSTU3N80K5 Datasheet/PDF
Quantity: 1
1 +: $ 1.19070
75 +: $ 0.95995
150 +: $ 0.86398
525 +: $ 0.67198
1050 +: $ 0.55678
Stock 1Can Ship Immediately
$ 1.31
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: I-PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 60W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 130pF @ 100V
Vgs (Max): 30V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
Series: SuperMESH5™
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STU3N80K5 is an single depolarization field effect transistor (Depfet) created to minimize the inherent power dissipation of charge-coupled devices. It is a type of transistor where the gate electrodes are self-isolated and allow for a low power dissipation. The solid-state configuration of the Depfet also allows for cheap cost production, yet with very high impedance. The purpose of the STU3N80K5 is to boost the response time and voltage gain within electronic circuits.

The STU3N80K5 is composed of three layers: the gate, drain, and source. The gate is discretely insulated from the other layers and serves as a voltage-controlled element. When an electric potential is applied through this layer, electrons can travel between the gate and the source or drain. This creates a change in the electric potential between these two layers, between the drain and the source, and ultimately at the output terminal. The output voltage can then be used to create further control signals .

The STU3N80K5 works based on the principle of "depolarization". When a voltage is applied to the gate of the device, electrons become polarized and begin to travel between the source and the drain. This movement of electrons creates an electrical change in the source-drain current. The magnitude of this current is proportional to the voltage applied to the gate. This in turn will create a voltage at the output terminal of the transistor, which is proportional to the input voltage applied to the gate. This property of the depolarized FET (DFET) is what allows it to be used as a voltage amplifier and is the main feature of the STU3N80K5.

The STU3N80K5 is commonly used in applications such as voltage regulation or voltage level shifting. It can also be used in high input resistance amplifiers, active filters, and wave shaping. The device is also used for turning on and off power in high current switching applications. The STU3N80K5 is also used for analog signal conditioning in high-frequency systems such as those used in radio, satellite, and fiber-optic communication systems.

It is also important to note that the STU3N80K5 has a relatively high breakdown voltage of 17 volts and can be used in switch-mode power supplies and in circuits where high voltage is present, such as in motor control systems. Additionally, the STU3N80K5 has been designed to be highly temperature resistant, making it an attractive device even in extreme temperature environments.

Overall, the STU3N80K5 is an advanced depolarized FET, capable of providing fast and robust signal amplifications in a variety of applications. Its high breakdown voltage and excellent temperature resistance makes it a reliable solution for a wide range of applications. The STU3N80K5 is particularly useful in sensitive analog applications, where its small signal amplification capabilities allow for precise shaping of signals and accurate control of levels. Additionally, its high input impedance renders it an ideal choice for applications where power adders are not an option.

The specific data is subject to PDF, and the above content is for reference

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