STU5N52K3

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This article will discuss the application field and working principle of the STU5N52K3, an N-channel enhancement mode field-effect transistor (FET) or metal-oxide-semiconductor FET (MOSFET). This FET is a single housing, three-lead device, and one of the many variations of FETs available.

What is an N-Channel MOSFET?

A MOSFET is a type of transistor that uses a thin oxide layer to insulate the gate from the channel, which has a concentration of majority carriers. These majority carriers are either electrons or holes depending on how the transistor is manufactured. MOSFETs can operate with low input drive current and are highly integrated in various applications due to their low cost and power efficiency.

An N-Channel MOSFET is a type of FET where a voltage applied to the gate can create a conducting channel in the N-type silicon. This means electrons can flow easily through the N-channel. This type of transistor is useful in controlling the amount of power going to a device with varying amounts of voltages.

What is the STU5N52K3?

The STU5N52K3 is a single housing, three-lead device is a FET from STMicroelectronics utilizing the N-channel MOSFET design. It is a 100V, 5A device with an on-resistance of 55mOhms and a gate-source capacitance of 5.5pF. It has a maximum operating temperature of 175oC, so it can handle situations with higher levels of heat.

Application Field

Due its design as an N-channel MOSFET and its characteristics of low input drive current, low cost, and power efficiency, this FET can be used in many applications. It can be used in power switching applications such as DC/DC converters, relay driving, and motor control. It can also be used in load switching applications such as LED lighting, telecommunications, and computer peripherals. Finally, it can also be used in a variety of other applications including AC motor control, automotive power switches, and power supplies.

Working Principle

The working principle of the STU5N52K3 MOSFET is dependent on the operation of electrons in the channel between the source and drain. When a voltage is applied to the gate, the electrostatic force between the gate and the N-type silicon creates a path for electrons to flow from the source to the drain. This creates a conducting channel in the silicon, allowing electron current to flow from the drain to the source and vice versa. The amount of current is then determined by the gate-source voltage, with greater amounts of current generated with higher gate-source voltages.

Conclusion

The STU5N52K3 is an N-channel MOSFET with an operating voltage of 100V and a current output of 5A. This transistor features low input drive current, low cost, and power efficiency, and can be used in a wide range of applications including power switching, load switching, and many others. The working principle of the STU5N52K3 is based on establishing a conducting channel between the source and drain when a voltage is applied to the gate, creating a path for current to flow from the source to the drain.

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