STU5N60M2 Allicdata Electronics
Allicdata Part #:

497-14224-5-ND

Manufacturer Part#:

STU5N60M2

Price: $ 1.34
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 3.7A TO220
More Detail: N-Channel 600V 3.7A (Tc) 45W (Tc) Through Hole TO-...
DataSheet: STU5N60M2 datasheetSTU5N60M2 Datasheet/PDF
Quantity: 891
1 +: $ 1.34000
10 +: $ 1.29980
100 +: $ 1.27300
1000 +: $ 1.24620
10000 +: $ 1.20600
Stock 891Can Ship Immediately
$ 1.34
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 45W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 165pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Series: MDmesh™ II Plus
Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STU5N60M2 is a power MOSFET module, a type of transistor. It belongs to the family of Transistors - FETs, MOSFETs - Single. As such, this module provides an efficient way of achieving higher power levels with low saturation voltage.

The STU5N60M2 module consists of several components, including a N-type MOSFET and two P-type MOSFETs mounted on a heat sink. Its structure consists of one inner N-type MOSFET and two outer P-type MOSFETs.

The STU5N60M2 module is mainly used in power supply applications and power conditioners. It is also used in robotics, switching power supplies, high-voltage converters, and many other power electronics applications such as home appliance motors.

The working principle of the STU5N60M2 is based on the principle of self-sustaining and bidirectional current flow. This is accomplished by the two N-type MOSFETs which form a parallel circuit allowing both positive and negative current flow. The two P-type MOSFETs are then connected in series to allow the bidirectional current flow. When the voltage at the gate is greater than the voltage across the source and drain, current flows through the two parallel N-type MOSFETs. This creates a current sink and generates a negative gate-source voltage. The two P-type MOSFETs then act as a current source and generate a positive gate-source voltage, enabling the bidirectional current flow. The STU5N60M2 module also includes a heat sink which helps to dissipate heat from the module, thus increasing its efficiency.

The STU5N60M2 module features a low-on-resistace of 0.4 ohms, low capacitance for fast switching, and low-voltage tolerance of 300V. It has high operational temperature and surge currents. It also features a wide range of operating frequencies from 100kHz to 2000kHz. Additionally, the STU5N60M2 also offers a maximum gate-source voltage of 275V and a maximum drain-source voltage of 650V. In addition, it also offers various reverse-blocking capabilities such as a blocking voltage of 300V and a forward dissipation of up to 30A.

In conclusion, the STU5N60M2 module is a powerful and efficient power MOSFET module. It is an ideal solution for power supply applications and power conditioners. Its low on-resistance, low capacitance, wide range of frequencies, and high surge current capabilities make it ideal for many power electronic applications. Additionally, its heat sink helps to dissipate heat from the module and increase its efficiency.

The specific data is subject to PDF, and the above content is for reference

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