STW80NF55-08 Allicdata Electronics
Allicdata Part #:

STW80NF55-08-ND

Manufacturer Part#:

STW80NF55-08

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 55V 80A TO-247
More Detail: N-Channel 55V 80A (Tc) 300W (Tc) Through Hole TO-2...
DataSheet: STW80NF55-08 datasheetSTW80NF55-08 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3850pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 8 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The STW80NF55-08 is a N-Channel power MOSFET which belongs to the family of field effect transistors (FET). It is a type of transistor where the current is controlled by an electrical field and is known for offering fast switching speed with little power losses. The STW80NF55-08 is able to be used for a variety of applications.

The STW80NF55-08 is designed to be an effective energy storage device due to its low on-resistance, high transconductance, and fast switching speed. The on-resistance of the MOSFET is 0.08 Ohms and its breakdown voltage is 20V. This makes it suitable for a variety of applications such as high-power switching applications, motor control, and power conversion applications.

In terms of its working principle, the STW80NF55-08 is based on the principle of negative gate voltage biasing. This type of gate biasing uses a negative voltage rather than a positive one which allows the FET to be controllable by a voltage signal. The gate voltage has an effect on the conductivity of the FET, meaning that the higher the voltage, the lower the resistance and the higher the current which can be used to determine the amount of power which is allowed to flow.

On top of that, the STW80NF55-08 also utilizes something called a body diode to help with switching at high speed and with minimal power losses. This is achieved through connecting the drain and the source to each other and the body diode allows current to flow in the same direction. The body diode also helps to limit the reverse current flow which can help to reduce power dissipation.

The STW80NF55-08 can also serve as a voltage regulator as long as it is used in conjunction with a resistive divider. A resistive divider will help to reduce the voltage at the gate of the MOSFET which makes it easier to regulate the voltage. This makes the STW80NF55-08 able to function as an adjustable voltage regulator which can be used in applications requiring a controlled output voltage such as power supplies, motor control applications, and inverters.

Overall, the STW80NF55-08 is a versatile and reliable power MOSFET which can be used in a variety of applications. Its low on-resistance, high transconductance, and fast switching capabilities make it an ideal choice for high-power switching applications and other applications requiring adjustable voltage regulation. The STW80NF55-08 is a reliable and effective device for many power conversion and control applications.

The specific data is subject to PDF, and the above content is for reference

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