STW88N65M5-4

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The STW88N65M5-4 is a power MOSFET designed for automotive and other industrial applications. It is a field-effect transistor (FET) with a single high voltage and an exceptionally high current density. It is designed for and can withstand greatly high temperatures.

The STW88N65M5-4 is an autonome high side, low side switch MOSFET. The FET acts as a substitution of a power ordering transistor, controlling high-power and energy loads with a minimum amount of components. It is frequently combined with a drivercircuit and a current shunt resistor that optimizes the design of high power applications.

The STW88N65M5-4 has a low thermal resistance, which is a necessary feature during high current applications. Its gate drive voltage is low (3V) and very robust regardless of topology. Additionally, the turn-on voltage drop is minimized which contributes to a higher power efficiency. Its peak current rating is 40A and its RDSon, the resistance from Drain to Source in the ON state, is very low at 0,035 ohms.

The STW88N65M5-4 works by switching current according to a control voltage. The control voltage is the voltage that the gate electrode of the FET receives from the driver circuit. The higher the gate control voltage is the larger the current from the drain to the source of the FET. When the gate voltage is below a certain threshold voltage, the FET will switch to its off state with the drain and source terminals resistant to each other.

The STW88N65M5-4 uses a source to source voltage of 80V and a drain to drain voltage of 175V. The drain current rating is up to 40A and the maximum working power is 720W. Since it can withstand high temperatures, it makes it an ideal choice for automotive applications where extreme temperatures can be found. It is also used in other industrial applications such as switching power supplies, inverters, motor drives and UPS systems.

This power MOSFET has a compact size and can fit easily into confined areas. It does not require a heatsink to protect itself as it is designed for such situations. It is compliant to the RoHS directive and its packaging makes it easier to be safely mounted on a printed circuit board. Additionally, this FET can be used in a wide temperature range from -55°C to +175°C.

The STW88N65M5-4 power MOSFET can be used in various automotive and industrial applications. Its single high voltage and high current density makes it suitable for power electronics solutions in which high switching speeds are needed. Additionally it has a low thermal resistance, a low gate drive voltage and a low resistance in its ON state. Therefore, the STW88N65M5-4 is an ideal component for a wide range of automotive and industrial applications.

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