| Allicdata Part #: | 497-18094-ND |
| Manufacturer Part#: |
STW8N120K5 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 1200V 8A TO-247 |
| More Detail: | N-Channel 1200V 6A (Tc) 130W (Tc) Through Hole TO-... |
| DataSheet: | STW8N120K5 Datasheet/PDF |
| Quantity: | 26 |
| Vgs(th) (Max) @ Id: | 5V @ 100µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 130W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 505pF @ 100V |
| Vgs (Max): | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 13.7nC @ 10V |
| Series: | MDmesh™ K5 |
| Rds On (Max) @ Id, Vgs: | 2 Ohm @ 2.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Drain to Source Voltage (Vdss): | 1200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STW8N120K5 is a power metal-oxide semiconductor field-effect transistor (MOSFET). It features a low gate-drain capacitance, an optimized P -channel power MOSFET structure for integrated circuit (IC) applications, low on-resistance, large output current, and high switching speed.
The MOSFET is one of the most commonly used devices in power electronics. It is based on the principle of a field-effect transistor (FET), which is a type of semiconductor device that relies on an electric field to control the current flow between two terminals. FETs are capable of operating at higher frequencies than their bipolar counterparts, resulting in faster switching speeds.
The STW8N120K5 is a single-element device, meaning that it has only one active component, in this case, a single P -channel MOSFET. It is used in a variety of applications, including motor speed control, high-side switching, and multiplexed data transmission. The STW8N120K5 is capable of operating at frequencies up to 80kHz, making it suitable for high-speed switching applications.
The STW8N120K5 is capable of withstanding a voltage of up to 600V, making it suitable for use in medium- and high-power applications. It also has a low on-resistance of 5.45mΩ, and an optimized P -channel power MOSFET structure for lower power loss and higher system efficiency. Additionally, its low gate-drain capacitance enables faster switching speeds and efficient power dissipation.
When used in a medium-power switching application, the STW8N120K5 has to be mounted on a suitable heat sink to ensure safe operation. Heat generated by the device should be dissipated from the sink quickly, so that the device does not overheat. The device should be driven with an insulated gate drive that can provide the desired gate drive voltage, according to the device’s safe operating range.
In conclusion, the STW8N120K5 is a single-element P -channel MOSFET, capable of operating at frequencies up to 80kHz, and with a maximum voltage of 600V. It is ideally suited for medium-power applications, including motor speed control, high-side switching, and multiplexed data transmission, and is noted for its low on-resistance and high switching speeds. It should be operated within its safe operating range, and with a suitable heat sink to ensure safe operation.
The specific data is subject to PDF, and the above content is for reference
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STW8N120K5 Datasheet/PDF