STWA57N65M5 Allicdata Electronics
Allicdata Part #:

497-13604-5-ND

Manufacturer Part#:

STWA57N65M5

Price: $ 13.26
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 42A TO247
More Detail: N-Channel 650V 42A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: STWA57N65M5 datasheetSTWA57N65M5 Datasheet/PDF
Quantity: 107
1 +: $ 12.05190
30 +: $ 10.13290
120 +: $ 9.31126
Stock 107Can Ship Immediately
$ 13.26
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 63 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STWA57N65M5 is a N-Channel Power MOSFET transistor that can be used in various applications. It is part of the STMicroelectronics range of power management products, and can be used in a variety of power-responsible designs. The device is suitable for use in applications such as switch-mode power supplies and power converters.

The STWA57N65M5 is an enhancement mode (normally off) power field-effect transistor. This type of transistor is built with two terminals, the source and the drain, and uses a control voltage at the gate terminal to control the flow of current from the source to the drain. The control voltage acts like a switch which opens and closes the transistor, and thus controls the flow of current. As a MOSFET, this transistor can handle large amounts of current in a small package, making it ideal for applications where high current is required.

The STWA57N65M5 is a high-performance, general-purpose N-channel power MOSFET with a maximum drain source voltage of 650 volts and a drain-source on-resistance of 0.45 ohms. The device is optimised for use in high-frequency switching applications, such as DC to DC converters, inverters, and motor control systems. It has a wide frequency range and low gate-charge, allowing it to be used in high-frequency applications.

The STWA57N65M5 has been designed to be used in various applications, including switching power supplies and power converters, battery-powered devices, motor control systems, and low-voltage regulators. It is particularly suitable for use in applications that require high-efficiency and low power consumption. The transistor is also available in a smaller package option for applications that require a more compact footprint.

To sum up, the STWA57N65M5 is a high-performance power MOSFET transistor ideal for high-frequency switching applications. It has a wide frequency range, low gate-charge, and high drain-source on-resistance, making it suitable for use in a variety of power-responsible designs. The device is also available in a smaller package option for more compact designs. As part of the STMicroelectronics range of power management products, the STWA57N65M5 is the perfect choice for a reliable, power-friendly solution.

The specific data is subject to PDF, and the above content is for reference

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