STWA88N65M5 Allicdata Electronics
Allicdata Part #:

497-13793-5-ND

Manufacturer Part#:

STWA88N65M5

Price: $ 9.86
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 84A TO-247
More Detail: N-Channel 650V 84A (Tc) 450W (Tc) Through Hole TO-...
DataSheet: STWA88N65M5 datasheetSTWA88N65M5 Datasheet/PDF
Quantity: 1000
600 +: $ 8.95573
Stock 1000Can Ship Immediately
$ 9.86
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 8825pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 204nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 29 mOhm @ 42A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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Introduction

The STWA88N65M5 is a type of MOSFET (metal-oxide semiconductor field-effect transistor) made by STMicroelectronics. It is classified as an N-channel, enhancement-mode MOSFET, and is designed to be used in applications such as load switching and level shifting.

Application Field

The STWA88N65M5 is designed for applications where a low on-resistance, low gate charge, and low capacitance are required. It is particularly well-suited for audio and video signal processing and power conversion applications. It is also ideal for motor control, solenoid control, high frequency switching, and shading coil control applications.

Working Principle

Like all MOSFETs, the STWA88N65M5 works by using a small amount of electric charge stored on the gate of the device to control a larger current flowing between the source and drain of the device. When a voltage is applied to the gate of the device, the voltage across its source and drain terminals changes. This change in voltage causes the device to conduct or block current flow between its source and drain terminals.

The STWA88N65M5 is an N-channel device, meaning it has an N-type semiconductor as its channel material. N-type material is composed of electrons, which are negatively charged, and are attracted to the gate. The attraction causes the electrons to be transferred between the source and drain, increasing the flow of current between them. When the gate voltage is removed, the electrons return to their original positions, and the current flow is reduced.

The STWA88N65M5 is an enhancement-mode MOSFET, meaning that its channel will remain off until a positive voltage is applied to the gate. This type of device is ideal for applications where a low on-resistance, low gate charge, and low capacitance are required.

Conclusion

The STWA88N65M5 is a type of N-channel, enhancement-mode MOSFET manufactured by STMicroelectronics. It is designed for applications where low on-resistance, low gate charge, and low capacitance are required, and is particularly well-suited for audio and video signal processing and power conversion applications. It works by using a small amount of electric charge stored on the gate of the device to control a larger current flowing between the source and drain of the device.

The specific data is subject to PDF, and the above content is for reference

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