| Allicdata Part #: | 497-4431-5-ND |
| Manufacturer Part#: |
STY30NK90Z |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 900V 26A MAX247 |
| More Detail: | N-Channel 900V 26A (Tc) 450W (Tc) Through Hole MAX... |
| DataSheet: |  STY30NK90Z Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 150µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | MAX247™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 450W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 12000pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 490nC @ 10V |
| Series: | SuperMESH™ |
| Rds On (Max) @ Id, Vgs: | 260 mOhm @ 14A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The STY30NK90Z power MOSFET is a P-channel, enhancement-mode device specifically designed for use with very low gate-drive voltage and requirements for very low power dissipation. It is constructed of three levels, the bulk of the drain, the source, and the gate. Its low on-state resistance and power dissipation capabilities make the STY30NK90Z an ideal choice for applications in the field of portable electronics and battery-powered products.
Application Field
The STY30NK90Z is designed to be used in applications that require very low gate drive voltages such as consumer electronics, automotive and industrial control, telecommunications, and portable communications devices.
In consumer electronics, the STY30NK90Z can be utilized in applications such as power switches, motion detectors, video amplifiers and light dimmers, power converters, DC-DC converters, converters to operate on AC power, low voltage power supplies, heaters and resistors, temperature controllers, load switches and power factor correction.
In automotive and industrial control, the STY30NK90Z can be used for applications such as motor controllers, gate drive, systems for variable speed motor drives, automotive electronic control modules and electronic ignitions. It is often used in telecommunications and wireless systems such as wireless broadband and Ethernet links, LTE base stations, wireless access points, and cellular networks base transceivers.
In portable communications, the STY30NK90Z is used in Wi-Fi and Bluetooth modules, near field communication (NFC) circuits and mobile power amplifiers.
Working Principle
The STY30NK90Z works by utilizing the electric field effect, the physical mechanism, which occurs between the source and the drain of a MOSFET. When a voltage is applied to the gate terminal, a current starts flowing from the source to the drain. The electric field between the gate and the drain creates an electric barrier that is proportional to the voltage and current. This electric barrier controls the electric current between the source and the drain.
The STY30NK90Z also utilizes the body effect, which occurs when a voltage is applied to the source terminal. This electric field is managed by the STY30NK90Z and is used to either enhance or reduce the electric field effect between the source and the drain.
The STY30NK90Z has a low gate threshold voltage, which makes it suitable for small voltage supplies. Furthermore, its low power consumption makes it well suited for mobile applications.
The STY30NK90Z provides excellent performance in terms of drain-source on-resistance and power dissipation in low voltage applications. It is a low cost, efficient, and reliable P-channel MOSFET.
The specific data is subject to PDF, and the above content is for reference
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