| Allicdata Part #: | 497-2680-5-ND |
| Manufacturer Part#: |
STY34NB50 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 500V 34A MAX247 |
| More Detail: | N-Channel 500V 34A (Tc) 450W (Tc) Through Hole MAX... |
| DataSheet: |  STY34NB50 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | MAX247™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 450W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9100pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 223nC @ 10V |
| Series: | PowerMESH™ |
| Rds On (Max) @ Id, Vgs: | 130 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The STY34NB50 is a N-Channel MOSFET (metal-oxide field-effect transistor), which is a transistor with three terminals. It is a high-performance device with several attractive features such as low gate charge and very low on-resistance (RDS(on)). The STY34NB50 is a single, 60 V, 500 mA device with a maximum RDS(on) of 0.045 ohm.
The STY34NB50 is used primarily in applications that require high-speed switching of large currents, such as in power conversion, motor control, and switching power supplies (SMPS). It is also used in line-level audio amplifiers, voltage regulators and other high-voltage/high-current applications. The low on-resistance and high switching speed of the device make it an ideal choice for such applications.
The main working principle of the STY34NB50 is essentially the same as for any other field-effect transistor (FET). As in any other FET, the STY34NB50 has three terminals: the gate, source and drain. When a voltage is applied to the gate, electrons are attracted to the gate, creating an electric field between the gate and source. This electric field creates a resistance between the gate and source, allowing current to flow from the source to the drain when a voltage is applied between the two.
In addition to the traditional transistor behavior, the STY34NB50 also has several attractive features, such as its low gate charge, which is the total charge required to move the channel from source to drain. This low gate charge makes the device suitable for high-speed switching applications. The device also has a low on-resistance, which is the total resistance when the channel is activated. The low RDS(on) value of the STY34NB50 also makes it ideal for applications requiring precise control of current.
The STY34NB50 is an extremely versatile transistor, capable of performing many different functions in a variety of applications. Its low gate charge and low on-resistance make it ideal for high-speed switching and precise control applications, while its high-voltage and large current capacity make it suitable for a wide range of applications. Because of its wide range of features and uses, the STY34NB50 is a very popular choice for small-signal and power electronic applications.
The specific data is subject to PDF, and the above content is for reference
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