SUP25P10-138-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SUP25P10-138-GE3 is a type of transistor, specifically an enhancement mode p-channel MOSFET. In such devices, the gate (G) is connected to an insulated metal gate or substrate, separated by a thin gate oxide layer. This gate can be charged or discharged to control the electric field in the bulk (B) region between it and the source (S). The electric field builds up the electric potential in the source and drain (D) terminals, allowing the current to flow.

The primary benefit of MOSFETs over other types of transistors is that they are highly energy-efficient and require very little input power to function. Furthermore, MOSFETs can handle much larger current than bipolar junction transistors. This makes them suitable for use in high-power applications, such as industrial automation, robotics, and power supplies.

The SUP25P10-138-GE3 MOSFET is a surface-mount device that is manufactured using advanced semiconductor techniques and processes. It features a 4.7V-5.5V gate-source voltage range, and a maximum drain-source voltage of 21V. The maximum drain current is specified as 25A and the maximum power dissipation rating is 140W. The MOSFET has a VGS(th) (gate threshold voltage) of 0.41V and an Rds(on) (3.5-5.5V) of 1.46 Ω.

The SUP25P10-138-GE3 MOSFET is designed for high-voltage, high-power applications, such as brushless DC motor drives, servo drives, and switching power supplies. It is also used in applications such as uninterruptible power supplies, welders, and automotive electronics. The device is offered in an SO8-packages, which is small and compact enough to fit into many tight spaces.

This MOSFET operates by using an electric field to control the flow of electrons between its drain and source. This field is generated by the voltage applied to the gate terminal. When the voltage between the gate and source is positive, a channel is created in the substrate between the source and drain, allowing electrons to flow from the source to the drain. Conversely, a negative voltage applied between the gate and source will reverse the flow and electrons can flow from the drain to source.

The SUP25P10-138-GE3 MOSFET is an important component for many industrial, automotive, and consumer applications. Its large current handling capacity and low on-resistance make it a good choice for power conversion and regulation in high-power devices. Furthermore, its small packaging size enables the device to be used in applications where space is limited.

The specific data is subject to PDF, and the above content is for reference