SUP28N15-52-E3

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SUP28N15-52-E3 is a type of Field Effect Transistor (FET) that belongs to the MOSFET (Metal Oxide Semiconductor FET) family. It is designed to be used as a power transistor and is supplied in SOT-223 package. The device is a P-channel enhancement mode MOSFET, which means it operates by using the voltage between the source and the drain to control the characteristics of the device. This particular device consists of a P-channel enhancement mode silicon gate connected to a source of voltage. The gate is used to control the characteristics of the device by supplying a voltage to the channel between the source and the drain.

SUP28N15-52-E3 is mainly used in applications where high power density, low gate charge and low power consumption are required. The device is suitable for DC-DC converter applications and motor control systems. It can also be used in low-noise pre-drivers, switching power supplies, phase control DC-DC converters, transformer based AC-DC converters, DC-AC inverters, limiters, battery chargers and other line-powered applications. Additionally, it is suitable for battery-powered applications, such as energy harvesters, electronic lighting, remote controllers and industrial electronic controls.

The working principle of SUP28N15-52-E3 is based on the electrostatic field effect that is created by the voltage applied between the source and the gate. This creates an electric field around the device, which induces positive and negative charges onto the gate. These charges affect the conductivity of the device, by either enhancing or inhibiting the flow of electric current. As the voltage applied to the gate changes, the charge induced onto the gate will also change, resulting in a change in the devices’ characteristics.

SUP28N15-52-E3 is capable of delivering up to 4A of continuous drain current, and can handle up to 16A peak drain current. The device is rated for a total gate-source voltage of +-20V and a drain-source voltage of +-30V. It has a maximum drain-source on-state resistance (RDS(ON)) of 28.5mΩ at a channel temperature (TCH) of 25℃ and an on-state drain current (ID) of 0.5A. Additionally, it has a maximum surge source-drain voltage (VSD) of 40V at a channel temperature of 25℃.

In conclusion, SUP28N15-52-E3 is a MOSFET, which has a wide range of applications, including those where high power density, low gate charge and low power consumption are needed. The device operates on the principle of the electrostatic field effect, which is created by the voltage applied between the source and the gate. It is capable of delivering up to 4A of continuous drain current, and has a maximum drain-source on-state resistance of 28.5mΩ and a maximum surge source-drain voltage of 40V.

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