Allicdata Part #: | TC1412EOA713-ND |
Manufacturer Part#: |
TC1412EOA713 |
Price: | $ 0.76 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC MOSFET DVR 2A HS INV 8SOIC |
More Detail: | Low-Side Gate Driver IC Inverting 8-SOIC |
DataSheet: | TC1412EOA713 Datasheet/PDF |
Quantity: | 1000 |
3300 +: | $ 0.68783 |
Logic Voltage - VIL, VIH: | 0.8V, 2V |
Base Part Number: | TC1412 |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 18ns, 18ns |
Input Type: | Inverting |
Current - Peak Output (Source, Sink): | 2A, 2A |
Series: | -- |
Voltage - Supply: | 4.5 V ~ 16 V |
Gate Type: | N-Channel, P-Channel MOSFET |
Number of Drivers: | 1 |
Channel Type: | Single |
Driven Configuration: | Low-Side |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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TC1412EOA713 is a high-performance gate driver with a maximum output power of 7A, an output voltage range of 3.3V to 20V, and a maximum output frequency of 17MHz. The device has a wide range of applications in the fields of power management integrated circuits (PMIC) and gate drivers. In this article, the application field and working principle of the TC1412EOA713 will be discussed.
The TC1412EOA713 has applications in PMICs and gate drivers because it provides a wide variety of functions and features, allowing it to be used in a wide range of applications. The device is ideal for power switching applications and is specifically designed to control the gate of a power MOSFET or IGBT. It is also suitable for use in battery management systems and motor control applications. Additionally, the device is characterized for operation at temperatures up to 150°C and has an input voltage range of 0.6V to 6V.
The TC1412EOA713 features a Charge Pump Input Voltage Regulation (CPIVR) circuit that doubles the gate drive voltage for improved performance and reliability. This allows the gate drive voltage to be adjusted according to the requirements of the application, and the gate drive voltage is increased from the input voltage to up to 20V. The device also features a low-side feedback gate voltage sensing technology that allows for switching speeds of up to 17MHz and prevents shoot-through current during transitions.
The TC1412EOA713 is designed to provide optimal performance in the field of power management integrated circuits. The device uses advanced gate driving techniques to minimize switching losses and minimize power dissipation in the MOSFET/IGBT. Additionally, the device is designed to operate at high current levels without degrading performance over time. Finally, the device has built-in protection against reverse voltage and over-voltage conditions.
In conclusion, the TC1412EOA713 is a high-performance gate driver with applications in power management integrated circuit (PMIC) and gate drivers. The device features a wide range of functions and features, including a charge pump input voltage regulation circuit, low-side feedback gate voltage sensing technology, and protection against reverse voltage and overvoltage condition. The device is also capable of operation at high current levels and high frequencies, making it ideally suited for use in power switching applications and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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