Allicdata Part #: | TF252-4-TL-H-ND |
Manufacturer Part#: |
TF252-4-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 1MA 30MW USFP |
More Detail: | JFET N-Channel 1mA 30mW Surface Mount 3-USFP |
DataSheet: | TF252-4-TL-H Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0): | 140µA @ 2V |
Current Drain (Id) - Max: | 1mA |
Voltage - Cutoff (VGS off) @ Id: | 100mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 3.1pF @ 2V |
Power - Max: | 30mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | 3-USFP |
Base Part Number: | TF252 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The TF252-4-TL-H is a type of JFET (Junction Field-Effect Transistor). JFETs are three-terminal semiconductor devices that operate by conducting or blocking electric current depending on the voltage applied to a control terminal. JFETs have high input impedance and can be used for many different applications due to their simple construction and low power consumption. The TF252-4-Tl-H is widely used in low-power switching and amplifier applications.
The basic construction of a JFET consists of two P-type semiconductor layers sandwiching a N-type semiconductor layer. This arrangement creates a PN junction between the layers. When a voltage is applied to the Gate terminal of the device, it modifies the junction potential, allowing conduction to occur between the Source and Drain terminals.
As a voltage-controlled device, the TF252-4-TL-H is best used as a low-power switch or as an amplifier. When used as a switch, it is used to control the current flow between the Source and Drain terminals by applying a voltage to the Gate terminal. Similarly, when used as an amplifier, the device can be used to amplify the voltage applied to the Gate terminal, which can then be used to control the current flow between the Source and Drain terminals.
In addition to switching and amplification applications, JFETs can also be used for more specialized applications such as RF amplifiers, buffers, pulse shaping, and levels shifters. In each of these applications, the principle of operation is the same. The voltage applied to the Gate terminal is used to modify the conductivity between the Source and Drain terminals.
The TF252-4-TL-H is a very versatile device, and has a wide range of applications. It is particularly useful for low-power switching and amplification applications due to its low power consumption and simple construction. This device is also well-suited for more specialized applications such as RF amplifiers and buffers due to its high input impedance. In all applications, the principle of operation is the same: the voltage applied to the Gate terminal is used to control the conductivity between the Source and Drain terminals.
The specific data is subject to PDF, and the above content is for reference
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