TF252-5-TL-H Allicdata Electronics
Allicdata Part #:

TF252-5-TL-H-ND

Manufacturer Part#:

TF252-5-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 1MA 30MW USFP
More Detail: JFET N-Channel 1mA 30mW Surface Mount 3-USFP
DataSheet: TF252-5-TL-H datasheetTF252-5-TL-H Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 2V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Power - Max: 30mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-USFP
Base Part Number: TF252
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors play an important role in modern electronic applications, from basic signal amplification to complex computing. Junction-Gate Field-Effect Transistors (JFETs) are a type of transistor with unique operating characteristics, including high input impedance and relatively large signal currents. The TF252-5-TL-H is a particular model of JFET that offers a number of benefits for specific applications. In this article, we\'ll discuss the TF252-5-TL-H application field and explain its working principle.

The TF252-5-TL-H is a self-contained N-channel JFET, designed to offer precision control of voltages and current in a wide range of applications. The device is particularly well-suited to audio and test instrumentation, as well as digital circuits. It is also commonly used in automotive, medical and industrial applications.

The JFET has a maximum DC voltage rating of 25 volts, a minimum of 6 volts and a current rating of 2.5 amps. The device is also highly reliable, with a maximum allowable drift rate and leakage of 0.3% and 3 mA, respectively. All of these features combine to make the JFET a highly attractive option for many applications.

The TF252-5-TL-H also offers several advantages over other types of transistors. First, its input impedance is much higher than that of most BJTs, allowing for better and more precise control of the signal current. Second, its much lower power requirement makes it ideal for low-power applications, such as those found in many electronic test and measurement devices. Finally, it has a very low noise level and is capable of very fast switching times.

The working principle of the TF252-5-TL-H is relatively simple. The device is composed of two PN junction transistors, which are connected in series. The drain and source of the two transistors are connected to the input voltage, while the gate voltage is applied to the gate electrode of the JFET. When the gate voltage is increased, the drain current increases and vice versa. This is known as the "JFET effect," and it is the basis of the device\'s operation.

The advantages offered by the TF252-5-TL-H make it an attractive choice for many applications. Its high input impedance, low power requirements, low noise level and fast switching times make it well-suited for a wide range of uses, including audio and test instrumentation, automotive and medical applications and more. With its versatile features and reliable performance, the TF252-5-TL-H is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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