TF256TH-3-TL-H

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Current - Drain (Idss) @ Vds (Vgs=0):	100µA @ 2V
Current Drain (Id) - Max:	1mA
Voltage - Cutoff (VGS off) @ Id:	100mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds:	3.1pF @ 2V
Power - Max:	100mW
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	3-SMD, Flat Leads
Supplier Device Package:	VTFP
Base Part Number:	TF256

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Introduction

TF256TH-3-TL-H is an analog integrated device and part of a growing family of low voltage, high performance JFET transistors. It offers many advantages over standard JFET designs, including enhanced performance at low power levels, increased electrical breakdown strength, and better thermal stability. Built for today\'s demanding applications, TF256TH-3-TL-H is an excellent choice for designers looking for a robust, low-power, low-voltage solution.

Application Fields

TF256TH-3-TL-H is most often used in analog and digital signal processing applications. It offers superior performance for these applications and provides a high current density for input and output stages at low power levels. In digital signal processing applications, the excellent thermal stability of TF256TH-3-TL-H allows designers to maximize their design parameters while minimizing the concerns of thermal instability. Additionally, the device is also used in power electronic applications, providing superior performance and reliability.

Working Principle

TF256TH-3-TL-H works by using a novel high-density, vertical-channel JFET technology. The device has a small emitter-gate reverse breakdown voltage and a very low on-state resistance. This improves efficiency, allowing the device to operate at a lower current level, even at high operating temperatures. Additionally, the high-density vertical-channel JFETs used by TF256TH-3-TL-H reduce parasitic capacitance and increase thermal stability compared to traditional JFETs.

Conclusion

TF256TH-3-TL-H is a low-voltage, high-performance JFET transistor. It is designed for low-power, low-voltage analog and digital signal processing applications and power electronics. This device offers many advantages over standard JFETs, including higher electrical breakdown strength and better thermal stability. Additionally, the high-density vertical-channel JFETs used in the design of TF256TH-3-TL-H allow for improved efficiency and minimal parasitic capacitance.

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