TF252TH-5-TL-H Allicdata Electronics
Allicdata Part #:

869-1205-2-ND

Manufacturer Part#:

TF252TH-5-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 0.1W 3VTFP
More Detail: JFET N-Channel 1mA 100mW Surface Mount 3-VTFP
DataSheet: TF252TH-5-TL-H datasheetTF252TH-5-TL-H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 210µA @ 2V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-VTFP
Base Part Number: TF252
Description

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The Transistor Field-Effect Transistor (TF252TH-5-TL-H) is a semiconductor device used in a variety of applications, both commercial and industrial. This article will explain the application field and working principle of this device.

Application Field of TF252TH-5-TL-H

Field-effect transistors are used in a variety of applications. The TF252TH-5-TL-H is particularly versatile, providing a wide range of application possibilities. It is mainly used in electronic equipment that works with high-frequency signals, such as radio receivers and transmitters, TV sets and audio equipment. It is also suitable for use in a variety of privacy filters, such as those used in computer monitors and TVs.

The TF252TH-5-TL-H is also used in power supplies for all kinds of devices, for example, in telecommunications equipment, medical equipment and military gear. It is also found in cellular phones, computers, and other consumer electronics.

Working Principle of TF252TH-5-TL-H

The TF252TH-5-TL-H is a Field Effect Transistor (FET) that comprises of two terminals, an input (source) and an output (drain). This two electrodes are made up of two layers of doped semiconductor material, one layer of n-type and one of p-type. This structure creates a channel in between the two layers and the majority carriers (positive or negative) can flow through this gap.

The main function of the FET is to control the current flow through this channel. This is achieved by varying the electric field applied at the Gate terminal. When the Gate voltage is positive, the electric field is oppsed to the flow of majority carriers (which prevents the current to flow through the gap), when the Gate voltage is negative, the electric field is in the same direction as the flow of majority carriers (which allows them to flow through the channel).

The TF252TH-5-TL-H therefore works as an amplifier, amplifying the input to output currents. This can be used for a variety of tasks, for example, it can act as an audio preamplifier, a voltage regulator, or a switching device.

In conclusion, the TF252TH-5-TL-H is a transistor field-effect device used in a range of applications, from audio equipment to telecoms. Its main function is to control the current through an electric field and it works as an amplifier in order to do that.

The specific data is subject to PDF, and the above content is for reference

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