Allicdata Part #: | TF256-3-TL-H-ND |
Manufacturer Part#: |
TF256-3-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | JFET N-CH 1MA 30MW USFP |
More Detail: | JFET N-Channel 1mA 30mW Surface Mount 3-USFP |
DataSheet: | TF256-3-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Current - Drain (Idss) @ Vds (Vgs=0): | 100µA @ 2V |
Current Drain (Id) - Max: | 1mA |
Voltage - Cutoff (VGS off) @ Id: | 100mV @ 1µA |
Input Capacitance (Ciss) (Max) @ Vds: | 3.1pF @ 2V |
Power - Max: | 30mW |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 3-SMD, Flat Leads |
Supplier Device Package: | 3-USFP |
Base Part Number: | TF256 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
A Junction Field-Effect Transistor (JFET) is a type of semiconductor device that uses a p-n junction between two terminals. It works on the principle of controlling the current flowing through the transistor by adjusting the voltage applied to its gate terminal. The TF256-3-TL-H is a N-Channel JFET specifically designed for high-frequency applications such as RF amplifiers or signal switching.When the gate voltage is zero, the Source and Drain terminals of the JFET are open and the current can freely flow between them. When a positive voltage is applied to the gate, the p-n junction created by the gate contact to the Source and Drain terminals forms an electrical field which prevents current from flowing. The amount of current blocked is dependent on the voltage applied to the gate terminal.The advantage of JFET over other field effect transistors (FETs) such as Metal-Oxide-Semiconductor FETs (MOSFETs) is that JFETs are less susceptible to noise pick-up and have low input capacitance. This makes them suitable for applications such as RF amplifiers and signal switching where high-speed operation is necessary.The TF256-3-TL-H has a maximum drain current of 250mA, a breakdown voltage of 30V, an operating temperature range from -55 to +125 °C, and a maximum frequency of 20GHz. It is especially suited for applications such as amplifiers, differential amplifiers, analog switches, and receiver circuits.In short, the TF256-3-TL-H is a very versatile and reliable N-Channel JFET designed to meet the demands of high-performance applications. It can be used in a wide range of applications including RF amplifiers, signal switching, and receiver circuits. Its low input capacitance and noise immunity make it an ideal choice for high-frequency applications where speed and accuracy are of the utmost importance.
The specific data is subject to PDF, and the above content is for reference
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