TF252TH-4-TL-H Allicdata Electronics
Allicdata Part #:

TF252TH-4-TL-H-ND

Manufacturer Part#:

TF252TH-4-TL-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: JFET N-CH 1MA 100MW VTFP
More Detail: JFET N-Channel 1mA 100mW Surface Mount 3-VTFP
DataSheet: TF252TH-4-TL-H datasheetTF252TH-4-TL-H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 140µA @ 2V
Current Drain (Id) - Max: 1mA
Voltage - Cutoff (VGS off) @ Id: 100mV @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 3.1pF @ 2V
Power - Max: 100mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Supplier Device Package: 3-VTFP
Base Part Number: TF252
Description

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Transistors are widely used in the electronics industry and are used in everything from computers to home appliances. Among them, JFETs are an important type of field-effect transistors. The TF252TH-4-TL-H is an N-Channel JFET transistor with a high-speed switching capability, and it is widely used for a variety of applications and operations.

Application Field of TF252TH-4-TL-H

The TF252TH-4-TL-H is a high-voltage N-Channel JFET transistor, so it is ideal for applications requiring fast switching and low power consumption. It is commonly used in PLL systems, and can be used to control high-speed data transfer rates and signal-level shifting. It is also used for telecommunications systems, and in the medical industry for applications such as pacemakers or infusion pumps.

In addition, TF252TH-4-TL-H is a low-noise JFET, allowing users to work with signals of lower noise-to-signal levels and keep high signal-to-noise performance. This makes it ideal for applications that depend on signal clarity, such as in audio systems. It is also commonly used in industrial applications that require precise control systems, including machine tools, robotics, and automated production lines.

Working Principle of TF252TH-4-TL-H

The TF252TH-4-TL-H is an N-Channel JFET transistor, so it works in the same way as a typical N-Channel JFET. It consists of an N-layer, an electrode, and a gate. The N-layer is also known as the channel, and electrons can travel through it from source to drain when a voltage is applied. The electrode and gate are separated from the channel by the gate oxide, and the number of electrons in the channel is controlled by the voltage applied to the gate.

When the voltage applied to the gate is below the pinch-off voltage, the channel is open, and the current flows freely through it. Above this voltage, the channel is pinched-off, preventing current flow and establishing the transistor’s OFF state. When the gate voltage is close to the threshold voltage, the channel is partially open, allowing a small current to flow – this is the transistor’s linear region.

The TF252TH-4-TL-H’s fast-switching capability is due to its high speed of switching between saturation and cutoff. This is caused by the thin gate oxide, which allows electrons to pass through more quickly. This causes the transistor to have a faster response time and signal processing ability than other N-Channel JFETs.

Conclusion

The TF252TH-4-TL-H is a high-speed, low-power N-Channel JFET transistor with a broad range of applications. It is used for high-speed signal switching, signal level shifting, and linear control applications. Its fast switching speed and low-noise characteristics make it suitable for applications such as PLL systems, audio systems, and industrial control systems.

The specific data is subject to PDF, and the above content is for reference

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