Allicdata Part #: | TK18A50D(STA4QM)-ND |
Manufacturer Part#: |
TK18A50D(STA4,Q,M) |
Price: | $ 2.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 500V 18A TO-220SIS |
More Detail: | N-Channel 500V 18A (Ta) 50W (Tc) Through Hole TO-2... |
DataSheet: | TK18A50D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.06048 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220SIS |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | π-MOSVII |
Rds On (Max) @ Id, Vgs: | 270 mOhm @ 9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TK18A50D (STA4, Q, M) transistor is part of a category of transistors called FETs, specifically MOSFETs which are single transistors. This type of transistor is widely used for power switching applications, particularly those applications involving current or voltage in excess of what one transistor can typically handle. The TK18A50D is available in both Through Hole and Surface Mount (SMT) formats, making it a versatile option for a wide range of applications.
MOSFETs are a type of field effect transistor (FET) that utilizes a conducting channel between two terminals, the source and the drain. This channel is formed by the application of a reverse biased voltage (the “gate”) that is typically connected to the source terminal of the transistor. When the voltage on the gate rises above a certain threshold, the current between the source and the drain will start to flow, and the transistor will become “on”. The higher the gate voltage, the higher the current flowing through the transistor.
The TK18A50D is a high performance MOSFET that can handle up to 18A of current and 50V of voltage. It has features to help reduce switching losses, including an internal anti-parallel diode and an integrated temperature monitoring circuit. The anti-parallel diode helps protect against inductive loads. The integrated temperature monitoring circuit can be used to control the maximum temperature of the transistor and ensure it doesn’t get too hot.
The TK18A50D is particularly well-suited for power switching applications, including in switching power supplies, DC-DC converters, motor drivers, and other systems that require high current and voltage switching. It’s also a good choice for applications requiring high efficiency and low power dissipation, such as solar inverters and other battery charging and discharging systems. The TK18A50D is also well-suited for high-speed switching applications, such as signal processing and audio/video applications.
The TK18A50D is a versatile, high performance transistor and is a popular choice for a wide range of high current and voltage switching applications. The anti-parallel diode, temperature monitoring circuit, high efficiency, and low switching losses make the TK18A50D an attractive option for many applications.
The specific data is subject to PDF, and the above content is for reference
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